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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0886 Features * Usable Gain to 5.5 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz * Low Noise Figure: 3.3 dB Typical at 1.0 GHz * Surface Mount Plastic Package * Tape-and-Reel Packaging Option Available[1] Note: 1. Refer to PACKAGING section "Tapeand-Reel Packaging for Semiconductor Devices." Description The MSA-0886 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost, surface mount plastic package. This MMIC is designed for use as a general purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, 86 Plastic Package ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9547E 6-426 MSA-0886 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150C -65C to 150C Thermal Resistance[2,4]: jc = 140C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.1 mW/C for TC > 80C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions: Id = 36 mA, ZO = 50 Power Gain (|S21| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 GHz f = 1.0 GHz f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 20.5 Typ. 32.5 22.5 2.1:1 1.9:1 Max. VSWR NF P1 dB IP3 tD Vd dV/dT dB dBm dBm psec V mV/C 6.2 3.3 12.5 27.0 140 7.8 -17.0 9.4 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. Part Number Ordering Information Part Number MSA-0886-TR1 MSA-0886-BLK No. of Devices 1000 100 Container 7" Reel Antistatic Bag For more information, see "Tape and Reel Packaging for Semiconductor Devices". 6-427 MSA-0886 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .63 .56 .43 .35 .30 .27 .27 .31 .35 .40 .45 .51 .61 .68 -22 -41 -69 -88 -104 -116 -144 -166 178 162 149 137 116 100 32.5 31.3 28.6 26.4 24.2 22.4 19.2 16.7 14.8 12.9 11.4 9.9 7.3 4.6 42.12 36.68 26.94 20.89 16.21 13.20 9.15 6.84 5.50 4.41 3.72 3.14 2.31 1.69 160 143 119 104 93 83 65 49 38 25 13 1 -22 -42 -36.7 -33.9 -29.1 -27.0 -25.3 -24.2 -21.6 -19.5 -17.9 -17.4 -16.8 -16.1 -15.7 -15.2 .015 .020 .035 .045 .054 .062 .083 .105 .128 .135 .145 .157 .164 .173 54 50 52 49 50 49 46 41 36 30 25 19 10 4 .62 .55 .43 .34 .29 .26 .23 .22 .21 .20 .19 .18 .17 .23 -24 -46 -79 -103 -124 -139 -172 163 149 132 124 121 130 143 0.68 0.64 0.69 0.77 0.83 0.87 0.93 0.96 0.96 1.01 1.02 1.01 1.00 0.95 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 35 30 25 G p (dB) 30 I d = 36 mA Id (mA) TC = +85C TC = +25C TC = -25C Gp (dB) 40 23 22 21 GP 13 P1 dB (dBm) 20 15 10 5 Gain Flat to DC 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) I d = 20 mA 20 P1 dB 12 11 NF (dB) 10 4 3 2 NF 0 0 2 4 6 Vd (V) 8 10 -25 0 +25 +55 +85 TEMPERATURE (C) Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. 16 I d = 40 mA 14 12 10 8 I d = 36 mA NF (dB) 4.5 4.0 I d = 20 mA I d = 36 mA I d = 40 mA P1 dB (dBm) 3.5 3.0 6 I d = 20 mA 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) 4 0.1 Figure 4. Output Power at 1 dB Gain Compression vs. Frequency. Figure 5. Noise Figure vs. Frequency. 6-428 86 Plastic Package Dimensions 0.51 0.13 (0.020 0.005) GROUND 4 RF INPUT 1 A08 45 RF OUTPUT AND DC BIAS C L 3 2.34 0.38 (0.092 0.015) 2 GROUND 2.67 0.38 (0.105 0.15) 1.52 0.25 (0.060 0.010) 5 TYP. 0.203 0.051 (0.006 0.002) 0.66 0.013 (0.026 0.005) 0.30 MIN (0.012 MIN) 8 MAX 0 MIN 2.16 0.13 (0.085 0.005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 6-429 |
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