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| PNP Silicon High-Voltage Transistors BFN 17 BFN 19 Suitable for video output stages in TV sets and switching power supplies q High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BFN 16, BFN 18 (NPN) q Type BFN 17 BFN 19 Marking DG DH Ordering Code (tape and reel) Q62702-F884 Q62702-F1057 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BFN 19 BFN 17 250 250 5 200 500 100 200 1 150 - 65 ... + 150 300 300 Unit V mA W C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 17 BFN 19 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA BFN 17 BFN 19 Collector-base breakdown voltage IC = 100 A BFN 17 BFN 19 Emitter-base breakdown voltage IE = 100 A Collector-base cutoff current VCB = 200 V VCB = 250 V VCB = 200 V, TA = 150 C VCB = 250 V, TA = 150 C Emitter-base cutoff current VEB = 3 V DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 30 mA, VCE = 10 V1) BFN 17 BFN 19 BFN 17 BFN 19 IEB0 hFE 25 40 40 30 VCEsat - - VBEsat - - - - 0.4 0.5 0.9 - - - - - - - - V V(BR)CE0 250 300 V(BR)CB0 250 300 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 20 20 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 5 nA - BFN 17 BFN 19 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN 17 BFN 19 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 20 mA, VCE = 10 V, f = 20 MHz Output capacitance VCB = 30 V, f = 1 MHz fT Cobo - - 100 2.5 - - MHz pF 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BFN 17 BFN 19 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Operating range IC = f (VCE0) TA = 25 C, D = 0 Permissible pulse load Ptot max/Ptot DC = f (tp) Collector current IC = f (VBE) VCE = 10 V Semiconductor Group 3 BFN 17 BFN 19 Transition frequency fT = f (IC) VCE = 10 V Collector cutoff current ICB0 = f (TA) VCB = 200 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 |
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