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| MITSUBISHI SEMICONDUCTOR TRIAC BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING 10 0.3 6.5 0.3 3 0.3 Dimensions in mm 2.8 0.2 15 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 E 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 2.6 0.2 V Measurement point of case temperature .................................................................. 3A q VDRM ...................................................... 400V / 600V q IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) V2 q IT (RMS) q UL T1 TERMINAL T2 TERMINAL GATE TERMINAL Recognized : File No. E80271 TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltageV1 Voltage class 8 400 500 12 600 720 Unit V V Non-repetitive peak off-state voltageV1 Symbol IT (RMS) ITSM I 2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Conditions Commercial frequency, sine full wave 360 conduction, Tc=111C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 3 30 3.7 3 0.3 6 0.5 -40 ~ +125 -40 ~ +125 2.0 Unit A A A2s W W V A C C g V Feb.1999 Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2000 V1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-a) Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=4.5A, Instantaneous measurement @ # ! Limits Min. -- -- -- -- -- -- -- -- 0.2 -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15 V2 15 V2 15 V2 -- 4.0 50 Unit mA V V V V mA mA mA V C/ W C/ W Gate trigger voltage V2 Tj=25C, VD=6V, RL=6, RG=330 Gate trigger current V2 @ # Tj=25C, VD=6V, RL=6, RG=330 Tj=125C, VD=1/2VDRM Junction to case V3 Junction to ambient Gate non-trigger voltage Thermal resistance Thermal resistance V2. High sensitivity (IGT 10mA) is also available. (IGT item ) V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 TC = 25C 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) 101 7 5 3 VGT 2 PGM = 3W IGM = 0.5A IRGT III PG(AV) = 0.3W IFGT I , IRGT I 100 7 5 3 2 IRGT I IFGM I , IRGM III VGD = 0.2V 10-1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (C/W) 7 5 4 3 2 MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) 102 5.0 4.5 4.0 360 3.5 CONDUCTION RESISTIVE, 3.0 INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 130 110 CURVES APPLY REGARDLESS 100 OF CONDUCTION 90 ANGLE 80 70 60 360 CONDUCTION 50 RESISTIVE, 40 INDUCTIVE LOADS 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) 120 CASE TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 100 80 60 40 20 0 0 1 2 3 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 120 120 t2.3 100 100 t2.3 60 60 t2.3 4 5 6 7 8 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 3 2 100 (%) TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 TYPICAL EXAMPLE HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 102 7 5 3 2 102 7 5 4 3 2 101 7 5 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) T2 , G EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 3 + + 2 T2 , G - TYPICAL - ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, LACHING CURRENT (mA) DISTRIBUTION + T2 , G- TYPICAL EXAMPLE Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C 160 140 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 120 100 80 III QUADRANT 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) I QUADRANT GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 103 7 5 4 3 2 IRGT III IRGT I TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) IFGT I 6V V A RG 6V V A RG 102 7 5 4 3 2 TEST PROCEDURE 6 TEST PROCEDURE 6V A V RG 101 0 10 2 3 45 7 101 2 3 45 7 102 GATE CURRENT PULSE WIDTH (s) TEST PROCEDURE Feb.1999 |
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