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TC4426 TC4427 TC4428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability .......................... 1000pF in 25nsec Short Delay Time .............................. < 40nsec Typ. Consistent Delay Times With Changes in Supply Voltage Low Supply Current -- With Logic "1" Input .................................... 4mA -- With Logic "0" Input ................................. 400A Low Output Impedance ....................................... 7 Latch-Up Protected ............. Will Withstand >0.5A Reverse Current ................................. Down to - 5V Input Will Withstand Negative Inputs ESD Protected .....................................................4kV Pinout Same as TC426/TC427/TC428 GENERAL DESCRIPTION The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. Other compatible drivers are the TC4426A/27A/28A. These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nsec range. They are pin compatible with the TC4426/27/28. FUNCTIONAL BLOCK DIAGRAM VDD INVERTING OUTPUTS s s s s s ORDERING INFORMATION Part No. TC4426COA TC4426CPA TC4426EOA TC4426EPA TC4426MJA TC4427COA TC4427CPA TC4427EOA TC4427EPA TC4427MJA TC4428COA TC4428CPA TC4428EOA TC4428EPA TC4428MJA Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP Temperature Range 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 300 mV OUTPUT NONINVERTING OUTPUTS INPUT 4.7V TC4426/TC4427/TC4428 GND EFFECTIVE INPUT C = 12 pF NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers. 2. TC4428 has one inverting and one noninverting driver. 3. Ground any unused driver input. (c) 2001 Microchip Technology Inc. DS21422A TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W PIN CONFIGURATIONS NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 2 7 8 NC 7 OUT A TC4426 6 VDD 5 OUT B TC4427 6 VDD 5 OUT B TC4428 6 VDD 5 OUT B 2,4 7,5 2,4 7,5 4 5 INVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. NONINVERTING DIFFERENTIAL ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified. Symbol Input VIH VIL IIN Output VOH VOL RO IPK IREV Parameter Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Test Conditions Min 2.4 -- -1 VDD - 0.025 -- -- -- > 0.5 Typ -- -- -- -- -- 7 1.5 -- Max -- 0.8 1 -- 0.025 10 -- -- Unit V V A V V A A 0V VIN VDD VDD = 18V, IO = 10mA Duty Cycle 2%, t 30sec Duty Cycle 2% t 30 sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) 2 Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current -- -- -- -- -- -- 19 19 20 40 -- -- 30 30 30 50 4.5 0.4 nsec nsec nsec nsec mA mA NOTE: 1. Switching times are guaranteed by design. TC4426/7/8-8 10/21/96 (c) 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 ELECTRICAL CHARACTERISTICS: Specifications measured over operating temperature range with 4.5V VDD 18V, unless otherwise specified. Test Conditions Symbol Input VIH VIL IIN Output VOH VOL RO IPK IREV Parameter Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Min 2.4 -- - 10 VDD - 0.025 -- -- -- > 0.5 Typ -- -- -- -- -- 9 1.5 -- Max -- 0.8 10 -- 0.025 12 -- -- Unit V V A V V A A 0V VIN VDD VDD = 18V, IO = 10mA Duty Cycle 2%, t 300sec Duty Cycle 2% t 300sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current -- -- -- -- -- -- -- -- -- -- -- -- 40 40 40 60 8 0.6 nsec nsec nsec nsec mA mA NOTE: 1. Switching times are guaranteed by design. -8 10 9 8 7 6 5 Crossover Energy Loss +5V INPUT 0V 10% 90% A * sec 4 3 VDD= 18V 4.7 F 0.1 F tD1 90% tF tD2 VDD tR 90% OUTPUT 6 2 INPUT 2,4 5,7 0V 10% 10% OUTPUT CL = 1000 pF Inverting Driver +5V -9 10 90% 4 6 8 10 12 VDD 14 16 18 3 INPUT 0V VDD INPUT: 100 kHz, square wave, tRISE = tFALL 10ns 10% 90% 90% tD2 10% Thermal Derating Curves 1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 tD1 OUTPUT 0V 10% tR tF MAX. POWER (mW) 1200 Noninverting Driver Figure 1. Switching Time Test Circuit NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. AMBIENT TEMPERATURE (C) (c) 2001 Microchip Technology Inc. DS21422A 3 TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 TYPICAL CHARACTERISTICS Rise Time vs. Supply Voltage 100 100 Fall Time vs. Supply Voltage 2200 pF 80 2200 pF 80 TA = 25C TA = 25C 1500 pF tRISE (nsec) 60 tFALL (nsec) 1500 pF 60 1000 pF 40 1000 pF 40 470 pF 20 20 470 pF 100 pF 100 pF 0 0 4 6 8 10 12 VDD 14 16 18 4 6 8 10 12 VDD 14 16 18 Rise TIme vs. Capacitive Load 100 100 Fall TIme vs. Capacitive Load TA = 25C 80 5V TA = 25C 80 5V tRISE (nsec) 60 10V 15V tFALL (nsec) 60 10V 15V 40 40 20 20 0 100 1000 CLOAD (pF) 10,000 0 100 1000 CLOAD (pF) 10,000 Rise and Fall Times vs. Temperature 60 C LOAD = 1000 pF VDD = 17.5V Propagation Delay vs. Supply Voltage 60 CLOAD = 1000 pF t D2 50 DELAY TIME (nsec) 50 TIME (nsec) 40 40 TA = 25C tD1 30 tFALL 20 tRISE 30 20 10 -55 -35 -15 10 5 25 45 65 85 TEMPERATURE (C) 105 125 4 6 8 10 12 VDD 14 16 18 TC4426/7/8-8 10/21/96 4 (c) 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 TYPICAL CHARACTERISTICS (Cont.) Effect of Input Amplitude on Delay Time 60 C LOAD = 1000 pF 50 VDD = 10V 50 Propagation Delay Time vs. Temperature 60 VDD = 18V VLOAD= 1000 pF t D2 40 t D1 DELAY TIME (nsec) 40 t D2 30 DELAY TIME (nsec) 30 20 t D1 20 10 0 2 4 6 VDRIVE (V) 8 10 10 -55 -35 -15 5 25 45 TA (C) 65 85 105 125 Quiescent Supply Current vs. Voltage TA = +25C IQUIESCENT (mA) Quiescent Supply Current vs. Temperature 4.0 V DD = 18V 3.5 IQUIESCENT (mA) BOTH INPUTS = 1 1 3.0 BOTH INPUTS = 1 2.5 BOTH INPUTS = 0 0.1 4 6 8 10 12 VDD 14 16 18 2.0 -55 -35 -15 5 25 45 TA (C) 65 85 105 125 High-State Output Resistance 25 25 Low-State Output Resistance 20 RDS(ON) () RDS(ON) () 20 WORST CASE @ TJ = +150C WORST CASE @ TJ = +150C 15 15 10 8 5 TYP @ TA = +25C 10 8 5 TYP @ TA = +25C 4 6 8 10 VDD 12 14 16 18 4 6 8 10 12 VDD 14 16 18 (c) 2001 Microchip Technology Inc. DS21422A 5 TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only) Supply Current vs. Capacitive Load 60 VDD = 18V 50 900 kHz 2 MHz 50 60 VDD = 18V 1000 pF 2200 pF Supply Current vs. Frequency ISUPPLY (mA) ISUPPLY (mA) 40 30 20 10 0 100 200 kHz 20 kHz 600 kHz 40 100 pF 30 20 10 0 1000 CLOAD (pF) 10,000 10 100 1000 FREQUENCY (kHz) Supply Current vs. Capacitive Load 60 VDD = 12V 50 2 MHz 50 60 Supply Current vs. Frequency VDD = 12V 2200 pF ISUPPLY (mA) ISUPPLY (mA) 40 30 900 kHz 20 10 0 100 200 kHz 20 kHz 1000 CLOAD (pF) 10,000 600 kHz 40 30 20 10 0 10 1000 pF 100 pF 100 1000 FREQUENCY (kHz) Supply Current vs. Capacitive Load 60 VDD = 6V 50 50 60 Supply Current vs. Frequency VDD = 6V ISUPPLY (mA) ISUPPLY (mA) 40 30 20 10 0 100 900 kHz 600 kHz 200 kHz 20 kHz 1000 CLOAD (pF) 10,000 40 30 20 10 0 10 100 1000 FREQUENCY (kHz) (c) 2001 Microchip Technology Inc. DS21422A 2 MHz 2200 pF 1000 pF 100 pF TC4426/7/8-8 10/21/96 6 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 PACKAGE DIMENSIONS 8-Pin CerDIP .110 (2.79) .090 (2.29) PIN 1 .300 (7.62) .230 (5.84) .055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18) .020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41) .150 (3.81) MIN. 3 MIN. 8-Pin Plastic DIP PIN 1 .260 (6.60) .240 (6.10) .045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92) .070 (1.78) .040 (1.02) .310 (7.87) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87) 3 MIN. .110 (2.79) .090 (2.29) .022 (0.56) .015 (0.38) Dimensions: inches (mm) 7 (c) 2001 Microchip Technology Inc. DS21422A TC4426/7/8-8 10/21/96 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 PACKAGE DIMENSIONS Cont.) 8-Pin SOIC .157 (3.99) .150 (3.81) .244 (6.20) .228 (5.79) .050 (1.27) TYP. .197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40) 8 MAX. Dimensions: inches (mm) TC4426/7/8-8 10/21/96 8 (c) 2001 Microchip Technology Inc. DS21422A 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428 WORLDWIDE SALES AND SERVICE AMERICAS Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com New York 150 Motor Parkway, Suite 202 Hauppauge, NY 11788 Tel: 631-273-5305 Fax: 631-273-5335 ASIA/PACIFIC (continued) Singapore Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-334-8870 Fax: 65-334-8850 San Jose Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955 Rocky Mountain 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-7456 Taiwan Microchip Technology Taiwan 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139 Toronto 6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509 Atlanta 500 Sugar Mill Road, Suite 200B Atlanta, GA 30350 Tel: 770-640-0034 Fax: 770-640-0307 ASIA/PACIFIC China - Beijing Microchip Technology Beijing Office Unit 915 New China Hong Kong Manhattan Bldg. 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India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, OiShaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062 Germany Arizona Microchip Technology GmbH Gustav-Heinemann Ring 125 D-81739 Munich, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44 Dayton Two Prestige Place, Suite 130 Miamisburg, OH 45342 Tel: 937-291-1654 Fax: 937-291-9175 Germany Analog Product Sales Lochhamer Strasse 13 D-82152 Martinsried, Germany Tel: 49-89-895650-0 Fax: 49-89-895650-22 Detroit Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260 Japan Microchip Technology Intl. Inc. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122 Italy Arizona Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883 Los Angeles 18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338 Korea Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea Tel: 82-2-554-7200 Fax: 82-2-558-5934 United Kingdom Arizona Microchip Technology Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820 Printed on recycled paper. 01/09/01 Mountain View Analog Product Sales 1300 Terra Bella Avenue Mountain View, CA 94043-1836 Tel: 650-968-9241 Fax: 650-967-1590 All rights reserved. (c) 2001 Microchip Technology Incorporated. Printed in the USA. 1/01 Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipis products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies. (c) 2001 Microchip Technology Inc. DS21422A 9 TC4426/7/8-8 10/21/96 |
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