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TC4426 TC4427 TC4428 1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
FEATURES
s s s s s s High Peak Output Current ............................... 1.5A Wide Operating Range .......................... 4.5V to 18V High Capacitive Load Drive Capability ........................ 1000 pF in 25 nsec Short Delay Time ................................ <40nsec Typ Consistent Delay Times With Changes in Supply Voltage Low Supply Current -- With Logic "1" Input .................................... 4mA -- With Logic "0" Input ................................. 400A Low Output Impedance ....................................... 7 Latch-Up Protected: Will Withstand >0.5A Reverse Current ................................. Down to - 5V Input Will Withstand Negative Inputs ESD Protected .....................................................4kV Pinout Same as TC426/TC427/TC428
1
GENERAL DESCRIPTION
The TC4426/4427/4428 are improved versions of the earlier TC426/427/428 family of buffer/drivers (with which they are pin compatible). They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. They can accept, without damage or logic upset, up to 500mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4kV of electrostatic discharge. As MOSFET drivers, the TC4426/4427/4428 can easily switch 1000 pF gate capacitances in under 30nsec, and provide low enough impedances in both the ON and OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. Other compatible drivers are the TC4426A/27A/28A. These drivers have matched input to output leading edge and falling edge delays, tD1 and tD2, for processing short duration pulses in the 25 nanoseconds range. They are pin compatible with the TC4426/27/28. FUNCTIONAL BLOCK DIAGRAM
VDD
INVERTING OUTPUTS
2 3 4 5
OUTPUT
s s s s s
ORDERING INFORMATION
Part No.
TC4426COA TC4426CPA TC4426EOA TC4426EPA TC4426MJA TC4427COA TC4427CPA TC4427EOA TC4427EPA TC4427MJA TC4428COA TC4428CPA TC4428EOA TC4428EPA TC4428MJA
Package
8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin CerDIP
Temperature Range
0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C 0C to +70C 0C to +70C - 40C to +85C - 40C to +85C - 55C to +125C
300 mV
NONINVERTING OUTPUTS
6 7
INPUT 4.7V
TC4426/TC4427/TC4428
GND EFFECTIVE INPUT C = 12 pF NOTES: 1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers. 2. TC4428 has one inverting and one noninverting driver. 3. Ground any unused driver input.
8
TC4426/7/8-8 10/21/96
TELCOM SEMICONDUCTOR, INC.
4-245
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V Input Voltage, IN A or IN B . (VDD + 0.3V) to (GND - 5.0V) Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C Package Thermal Resistance CerDIP RJ-A ................................................ 150C/W CerDIP RJ-C .................................................. 50C/W PDIP RJ-A ................................................... 125C/W PDIP RJ-C ..................................................... 42C/W SOIC RJ-A ................................................... 155C/W SOIC RJ-C ..................................................... 45C/W PIN CONFIGURATIONS
NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4
Operating Temperature Range C Version ............................................... 0C to +70C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Package Power Dissipation (TA 70C) Plastic .............................................................730mW CerDIP ............................................................800mW SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
8 NC 7 OUT A NC 1 IN A 2 GND 3 IN B 4 2 7 8 NC 7 OUT A
TC4426
6 VDD 5 OUT B
TC4427
6 VDD 5 OUT B
TC4428
6 VDD 5 OUT B
2,4
7,5
2,4
7,5 4 5
INVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP.
NONINVERTING DIFFERENTIAL
ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol Input
VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 2.4 -- -1 VDD - 0.025 -- -- -- > 0.5 -- -- -- -- -- 7 1.5 -- -- 0.8 1 -- 0.025 10 -- -- V V A V V A A
Parameter
Test Conditions
Min
Typ
Max
Unit
0V VIN VDD
Output
VOH VOL RO IPK IREV
VDD = 18V, IO = 10 mA Duty Cycle 2%, t 30 sec Duty Cycle 2% t 30 sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
Switching Time (Note 1)
tR tF tD1 tD2 -- -- -- -- -- -- 19 19 20 40 -- -- 30 30 30 50 4.5 0.4 nsec nsec nsec nsec mA mA
Power Supply
IS
NOTE: 1. Switching times are guaranteed by design. 4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
ELECTRICAL CHARACTERISTICS (CONT.): Specifications measured over operating temperature
Symbol Input
VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current High Output Voltage Low Output Voltage Output Resistance Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time Fall Time Delay Time Delay Time Power Supply Current 2.4 -- - 10 VDD - 0.025 -- -- -- > 0.5 -- -- -- -- -- 9 1.5 -- -- 0.8 10 -- 0.025 12 -- -- V V A V V A A
1
range with 4.5V VDD 18V, unless otherwise specified. Min Typ Max Unit
Parameter
Test Conditions
2 3 4 5
0V VIN VDD
Output
VOH VOL RO IPK IREV
VDD = 18V, IO = 10 mA Duty Cycle 2%, t 300sec Duty Cycle 2% t 300sec Figure 1 Figure 1 Figure 1 Figure 1 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
Switching Time (Note 1)
tR tF tD1 tD2 -- -- -- -- -- -- -- -- -- -- -- -- 40 40 40 60 8 0.6 nsec nsec nsec nsec mA
Power Supply
IS
NOTE: 1. Switching times are guaranteed by design.
10
-8 9 8 7 6 5
Crossover Energy Loss
+5V INPUT 0V 10% tD1 90% 90%
VDD= 18V
4.7 F 0.1 F
tF
tD2
A * sec
4 3
INPUT
VDD OUTPUT
tR
90%
6 2,4 5,7
0V OUTPUT 10% 10%
2
CL = 1000 pF
Inverting Driver
6
tF
+5V INPUT
90%
10
-9 4 6 8 10 12 VDD 14 16 18
3
0V VDD
INPUT: 100 kHz, square wave, tRISE = tFALL 10ns
10% 90% 90% tD2 10%
tD1
Thermal Derating Curves
1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120
OUTPUT 0V 10%
tR
MAX. POWER (mW)
Noninverting Driver
7
1200
Figure 1. Switching Time Test Circuit NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4.
AMBIENT TEMPERATURE (C)
8
TELCOM SEMICONDUCTOR, INC.
4-247
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100 100
Fall Time vs. Supply Voltage
2200 pF
80
2200 pF
80
TA = 25C
TA = 25C
1500 pF
tRISE (nsec)
tFALL (nsec)
1500 pF
60
60 1000 pF 40
1000 pF
40
470 pF
20 20
470 pF 100 pF
100 pF
0 0
4
6
8
10
12 VDD
14
16
18
4
6
8
10
12 VDD
14
16
18
Rise TIme vs. Capacitive Load
100 TA = 25C 80 100
Fall TIme vs. Capacitive Load
TA = 25C
80 5V
5V
tRISE (nsec)
60
10V 15V
tFALL (nsec)
60
10V 15V
40
40
20
20
0 100
1000 CLOAD (pF)
10,000
0 100
1000 CLOAD (pF)
10,000
Rise and Fall Times vs. Temperature
60
C LOAD = 1000 pF VDD = 17.5V DELAY TIME (nsec)
Propagation Delay vs. Supply Voltage
60 t D2
50
CLOAD = 1000 pF
50
TIME (nsec)
40
40
TA = 25C
tD1
30 tFALL 20 tRISE
30
20
10 -55 -35 -15
10
5 25 45 65 85 TEMPERATURE (C)
105 125
4
6
8
10
12 VDD
14
16
18
4-248
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
TYPICAL CHARACTERISTICS (Cont.)
Effect of Input Amplitude on Delay Time
60
C LOAD = 1000 pF 50
DELAY TIME (nsec)
1
Propagation Delay Time vs. Temperature
60 VDD = 18V VLOAD= 1000 pF t D2 40 t D1
2 3
VDD = 10V
DELAY TIME (nsec)
50
40 t D2 30
30
20
t D1
20
10 0 2 4 6 VDRIVE (V) 8 10
10 -55 -35 -15
5
25 45 TA (C)
65
85
105 125
4 5
Quiescent Supply Current vs. Voltage
TA = +25C
IQUIESCENT (mA)
Quiescent Supply Current vs. Temperature
4.0 V DD = 18V 3.5
IQUIESCENT (mA)
BOTH INPUTS = 1 1
3.0
BOTH INPUTS = 1
2.5 BOTH INPUTS = 0
0.1 4
6 8 10 12 VDD 14 16 18
2.0 -55 -35 -15
5
25 45 TA (C)
65
85
105 125
6 7
High-State Output Resistance
25 25
Low-State Output Resistance
20
RDS(ON) () RDS(ON) ()
20
WORST CASE @ TJ = +150C WORST CASE @ TJ = +150C 15
15
10 8 5
TYP @ TA = +25C
10 8 5
TYP @ TA = +25C
4
6
8
10
VDD
12
14
16
18
4
6
8
10
12 VDD
14
16
18
8
4-249
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4426 TC4427 TC4428
SUPPLY CURRENT CHARACTERISTICS (Load on Single Output Only)
Supply Current vs. Capacitive Load
60 VDD = 18V 50 900 kHz
ISUPPLY (mA)
Supply Current vs. Frequency
60 VDD = 18V 50
ISUPPLY (mA)
2 MHz
1000 pF 2200 pF
40 30 20 10 0 100 200 kHz 20 kHz 600 kHz
40 100 pF 30 20 10 0
1000 CLOAD (pF)
10,000
10
100 1000 FREQUENCY (kHz)
Supply Current vs. Capacitive Load
60 VDD = 12V 50
ISUPPLY (mA) ISUPPLY (mA)
Supply Current vs. Frequency
60 VDD = 12V 50 40 30 20 10 100 pF 1000 pF 2200 pF
2 MHz
40 30 900 kHz 20 10 0 100 200 kHz 20 kHz 1000 CLOAD (pF) 10,000 600 kHz
0 10
100 1000 FREQUENCY (kHz)
Supply Current vs. Capacitive Load
60 VDD = 6V 50
ISUPPLY (mA)
Supply Current vs. Frequency
60 VDD = 6V 50
ISUPPLY (mA)
40 30 20 10 0 100 900 kHz 600 kHz 200 kHz 20 kHz 1000 CLOAD (pF) 10,000
40 30 20 10 0 10 100 1000 FREQUENCY (kHz) 1000 pF 2200 pF
2 MHz
100 pF
4-250
TELCOM SEMICONDUCTOR, INC.

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