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Transistors
2SC5609
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SA2021 I Features
* High foward current transfer ratio hFE * SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
0.33+0.05 -0.02 3
0.10+0.05 -0.02
(0.40) (0.40) 0.800.05 1.200.05 5
0.15 min.
0.23+0.05 -0.02
1
2
I Absolute Maximum Ratings Ta = 25C
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO ICP IC PC Tj Tstg 60 50 7 200 100 100 125 -55 to +125 V V V mA mA mW C C
0 to 0.01
Parameter
Symbol
Rating
Unit
1: Base 2: Emitter 3: Collector SSS Mini Type Package (3-pin)
Marking Symbol: 3F
I Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Symbol ICBO ICEO Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio VCBO VCEO VEBO hFE1 hFE2 Collector to emitter saturation voltage Collector output capacitance Transition frequency VCE(sat) Cob fT Conditions VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 2 mA VCE = 2 V, IC = 100 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IE = -2 mA, f = 200 MHz 60 50 7 180 90 0.1 3.5 80 0.3 V pF MHz 390 Min Typ Max 0.1 100 Unit A A V V V
0.520.03
5
0.15 min.
0.800.05
1.200.05
1

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