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| TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max External Dimensions (Unit: mm) 16.7max 3.00.2 8.80.2 10.4max 5.0max 2.1max 3.750.1 a b 0.15 1.35 12.0 min 4.0 max +0.2 0.65 -0.1 0.1 2.5 (1). Cathode (K) (2). Anode (A) (3). Gate (G) 0.1 2.5 0.2 1.7 a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.6g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Symbol VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg Ratings TF321M 200 200 300 300 TF341M 400 400 500 500 3.0 4.7 60 2.0 10 5.0 5.0 0.5 -40 to +125 -40 to +125 TF361M 600 600 700 700 Unit V V V V A A A A V V W W C C Conditions Tj= -40 to +125C, RGK =1k 50Hz Half-cycle sinewave, Continuous current, Tc=102C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10% sElectrical Characteristics Parameter Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance Symbol IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth Ratings min typ max 2.0 2.0 1.4 1.5 2.0 0.1 4.0 50 30 3.0 10 Unit mA mA V V mA V mA V/S S C/W Conditions Tj=125C, VD=VDRM(VRRM), RGK=1k TC=25C, ITM=5A VD=6V, RL=10, TC=25C VD=1/2 x VDRM, Tj=125C, RGK=1k RGK=1k, Tj=25C VD=1/2 x VDRM, Tj=125C, RGK=1k, CGK=0.033F Tc=25C Junction to case 6 TF321M / TF341M / TF361M vT - iT Characteristics (max) 100 Surge on-state current ITSM (A) 50 ITSM Ratings 100 Initial junction temperature Tj=125C ITSM 10 ms 1cycle Gate Characteristics Gate trigger voltage VGT (V) 12 10 iT (A) vGF (V) Tj =125C 10 5 Tj = 25C 80 1 On-state current 8 6 4 Gate voltage 60 0 0 10 20 30 Gate trigger current IGT (mA) 40 1 0.5 0.3 1.0 2.0 On-state voltage 3.0 4.0 20 2 See graph at the upper right 0 0 0 1 5 10 50 100 1 Gate current 2 Tj=25C Tj= -20C Tj= -40C 2 P GM = 5W 3 vT ( V ) Number of cycle iGF (A) IT(AV) - PT(AV) Characteristics Average on-state power PT(AV) (W) 0 18 IT(AV) - Tc Ratings 150 50Hz Half-cycle sinewave : Conduction angle 180 0 6 5 4 0 DC 50Hz Half-cycle sinewave : Conduction angle 0 180 0 15 125 Case temperature TC (C) 12 60 90 100 DC = 3 2 1 0 0 30 75 50 25 0 1 2 3 4 5 0 Average on-state current IT(AV) (A) 1 2 3 4 Average on-state current IT(AV) (A) =30 120 150 180 60 90 5 Pulse trigger temperature Characteristics vgt (Typical) 30 trigger VGT DC gateat 25C voltage Pulse trigger temperature Characteristics igt (Typical) IH temperature Characteristics (Typical) igt 15 50% trigger IGT DC gateat 25C current 50% ) vgt tw ) 30 10 TC =- 40C -20C 25C 75C 125C (RGK=1k) tw 10 TC=- 40C -20C 25C 75C 125C 1 Holding current IH (mA) 10 3 10 4 ( 10 ( vgt ( Gate trigger voltage) at Ta and tw igt (Gate trigger current ) at Ta and tw 1 5 0.1 0.05 0.5 1 10 10 2 10 3 10 4 0.1 10 10 2 0 -40 0 25 50 75 100 125 0.05 0.5 1 Pulse width tw (s) Pulse width tw (s) Junction temperature Tj (C) VGT temperature Characteristics (Typical) 1.0 (VD=6V, RL=10) IGT temperature Characteristics (Typical) 6 (VD=6V, RL=10) Transient thermal resistance Characteristics (Junction to case) 10 Gate trigger current IGT (mA) Gate trigger voltage VGT (V) 0.8 5 4 0.6 Transient thermal resistance rth (C/W) 1 0.1 1 10 3 2 1 0 -40 0.4 0.2 0 -40 0 25 50 75 100 125 0 25 50 75 100 125 10 2 10 3 10 4 Junction temperature Tj (C) Junction temperature Tj (C) t, Time (ms) 7 |
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