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| e PTB 20134 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20134 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 860-900 MHz Class AB Characteristics 50% Min Collector Efficiency at 30 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 50 Output Power (Watts) VCC = 25 V 40 30 20 10 0 0 1 2 3 4 5 ICQ = 100 mA f = 900 MHz 201 34 LOT COD E Input Power (Watts) Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 50 4.0 8.0 80 0.45 -40 to +150 2.2 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20134 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz) Intermodulation Distortion (VCC = 25 Vdc, Pout = 30 W(PEP), ICQ = 100 mA, f = 900 MHz, f = 1 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 30 W, ICQ = 100 mA, f = 900 MHz--all phase angles at frequency of test) Symbol Gpe C IMD Min 8 50 -- Typ 9.5 -- -30 Max -- -- -- Units dB % dBc -- -- 30:1 -- Typical Performance Gain & Efficiency vs. Frequency (as measured in a broadband circuit) 13 12 80 70 Efficiency (%) 60 50 Gain (dB) Efficiency (%) Gain (dB) 11 10 9 8 7 850 VCC = 25 V ICQ = 100 mA POUT = 30 W 40 30 20 910 860 870 880 890 900 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20134 Uen Rev. D 09-28-98 2 |
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