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| e PTB 20078 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor Description The 20078 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1525-1660 MHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 4.5 Output Power (Watts) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 200 78 LO TC OD E VCC = 26 V ICQ = 20 mA f = 1.66 GHz Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Thermal Resistance (Tflange = 70C) Tstg RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.5 10.0 0.057 150 17.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20078 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 5 mA IB = 0 A, IC = 10 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 1.0 W, ICQ = 20 mA, f = 1.525; 1.66 GHz) Power Out at 1 dB Compression (VCC = 26 Vdc, ICQ = 20 mA, f = 1.525; 1.66 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 20 mA f = 1.660 GHz--all phase angles at frequency of test) Symbol Gpe Min 9 Typ 11.0 Max -- Units dB P-1dB 2.5 3.5 -- Watts -- -- 5:1 -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 20 mA) Z Source Z Load Frequency GHz 1.525 1.593 1.660 R 16.9 13.7 11.3 Z Source jX 0.5 2.3 4.6 R 12.9 12.9 12.9 Z Load jX 23.8 25.9 27.7 Z0 = 50 2 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 15 12 PTB 20078 Gain (dB) 9 6 3 0 1.50 VCC = 26 V ICQ = 20 mA Pin = .07 W 1.55 1.60 1.65 1.70 Frequency (GHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20078 Uen Rev. C 09-28-98 3 |
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