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Datasheet File OCR Text: |
e PTB 20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 1 Watt, 1465-1513 MHz Class AB Characteristics 18% Collector Efficiency at 1 Watt Gold Metallization Silicon Nitride Passivated 200 46 LOT COD E Package 20201 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Thermal Resistance (Tflange = 70C) Tstg RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.7 10 0.057 150 17.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20046 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 VBE = 0 V, IC = 10 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 1501 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 1 W(PEP), ICQ = 40 mA, f1 = 1500 MHz, f2 = 1501 MHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA, f = 1501 MHz--all phase angles at frequency of test) -- -- 5:1 -- Symbol Gpe P-1dB C IMD Min 10.5 2.5 18 -- Typ -- -- -- -23 Max -- -- -- -- Units dB Watts % dBc Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 1 W, ICQ = 40 mA) Z Source Z Load Frequency MHz 1477 1489 1501 R Z Source jX -1.49 -1.26 -1.05 R 8.69 8.84 9.08 Z Load jX 15.67 16.01 16.44 10.42 10.20 9.87 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1994 EUS/KR 1301-PTB 20046 Uen Rev. D 09-28-98 2 |
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