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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES
A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor.
A1
1
KTC812U
EPITAXIAL PLANAR NPN TRANSISTOR
B B1 6 5 4 D
High pairing property in hFE. The follwing characteristics are common for Q1, Q2.
2
DIM A A1 B
B1 C D G H
3
MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1
0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05
A
H
C
C
T G
T
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
)
SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 50 5 150 30 200 150 -55 150 UNIT V V V mA mA mW
1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1
EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
Q1
Q2
1
2
3
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO IEBO
)
TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 MIN. 120 80 , Rg=10 TYP. 0.1 2 1.0
Type Name
6 5 4
SYMBOL
MAX. 0.1 0.1 400 0.3 3.5 10
UNIT.
hFE (Note) VCE(sat) fT Cob NF
V
VCE=10V, IC=1 VCB=10V, IE=0, f=1 VCE=6V, IC=0.1 , f=1
Note : hFE Classification Y(4):120 240, GR(6):200 400
Marking
W
1 2 3
hFE Rank
2002. 1. 7
Revision No : 0
1/3
KTC812U
IC
240 COLLECTOR CURRENT I C (mA)
6.0mA 5.0mA
- V CE
COMMON EMITTER Ta=25 C 2.0mA
h FE - I C
1k DC CURRENT GAIN h FE 500 300
Ta=100 C Ta=25 C Ta=-25 C VCE =6V COMMON EMITTER
200 160 120 80 40 0
3.0mA
1.0mA 0.5mA I B =0.2mA 0
100 50 30
VCE =1V
0
1
2
3
4
5
6
7
10 0.1
0.3
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
V CE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
COMMON EMITTER I C /I B=10
VBE(sat) - I C
10 5 3
COMMON EMITTER I C /I B=10 Ta=25 C
0.1 0.05 0.03
0 =1 Ta
0
C
1 0.5 0.3
Ta=25 C Ta=-25 C
0.01 0.1
0.3
1
3
10
30
100
300
0.1
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT IC (mA)
fT - IC
TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10
COMMON EMITTER VCE =10V Ta=25 C
I B - VBE
3k BASE CURRENT I B (A) 1k 300 100
25 C 5C Ta=2
COMMON EMITTER VCE =6V
30 10 3 1 0.3 0 0.2 0.4
Ta=1
00 C
0.1
0.3
1
3
10
30
100
300
0.6
Ta=-
0.8
1.0
1.2
COLLECTOR CURRENT I C (mA)
BASE-EMITTER VOLTAGE V BE (V)
2002. 1. 7
Revision No : 0
2/3
KTC812U
COLLECTOR POWER DISSIPATION P C (mW)
Pc - Ta
250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C)
2002. 1. 7
Revision No : 0
3/3

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