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| Datasheet File OCR Text: |
| Central CMPT930 NPN SILICON TRANSISTOR DESCRIPTION TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPT930 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier applications. Marking Code is C1X. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA 45 45 5.0 30 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO ICES IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE hFE fT Cob NF TEST CONDITIONS VCB=45V VCE=5.0V VCE=45V VEB=5.0V IC=10A IC=10mA IE=10A IC=10mA, IB=0.5mA IC=10mA, IB=0.5mA VCE=5.0V, IC=10A VCE=5.0V, IC=500A VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA, f=30MHz VCB=5.0V, IE=0, f=1.0MHz VCE=5.0V, IC=10mA, RS=10k, f=10Hz to 15.7kHz MIN MAX 10 10 10 10 UNITS nA nA nA nA V V V V V 45 45 5.0 0.6 100 150 30 8.0 3.0 1.0 1.0 300 600 MHz pF dB 156 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 157 |
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