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| (R) TN1215-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TN1215 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to 400Hz on resistive or inductive load. A A K G D2PAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conductionangle) Average on-state current (180 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C) It dI/dt T stg Tj Tl 2 Value Tc= 110C Tc= 110C tp = 8.3 ms tp = 10 ms tp = 10ms 12 8 146 140 98 100 - 40 to + 150 - 40 to + 125 260 Unit A A A I t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/s. IG = 100 mA Storage junction temperature range Operating junction temperature range 2 A2s A/s C C Maximum temperature for soldering during 10s Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125C TN1215600G 600 800G 800 Unit V January 1998 - Ed: 4 1/5 TN1215-G THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=1cm2) Junction to case for D.C Value 45 1.3 Unit C/W C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT Test Conditions VD = 12V (DC) RL= 33 Tj= 25C Type MIN MAX VGT VGD IH IL VTM IDRM IRRM dV/dt VD = 12V (DC) RL= 33 VD = VDRM RL = 3.3k IT= 100mA IG = 1.2 IGT ITM= 24A tp= 380s VD = VDRM VR = VRRM VD=67%VDRM Gate open Gate open Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Tj= 125C MAX MIN MAX MAX MAX MAX MAX MIN Value 2 15 1.3 0.2 30 60 1.5 5 3 200 V V mA mA V A mA V/s Unit mA IGM = 4 A (tp = 20 s) VRGM = 5 V ORDERING INFORMATION Add "-TR" suffix for Tape & Reel shipment TN SCR CURRENT 2/5 12 15 - 600 G PACKAGES : G: D2PAK SENSITIVITY VOLTAGE (R) TN1215-G Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase ) for different thermal resistances heatsink+contact. P(W) 14 =180 =120 =60 =30 =90 D.C. P(W) 14 12 10 8 6 4 2 0 0 2 4 IT(AV)(A) 6 8 10 12 Tcase (C) 12 10 8 Rth=8C/W Rth=5C/W Rth=3C/W Rth=0C/W 110 115 6 4 2 0 0 20 40 60 80 100 120 140 =180 120 Tamb(C) 125 Fig. 3: Average and D.C. on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus pulse duration. IT(AV)(A) 14 12 10 =180 D.C. K=[Zth/Rth] 1.00 Zth(j-c) 8 0.10 Zth(j-a) 6 4 2 0 0 25 Tcase( C) 50 75 100 125 0.01 1E-3 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger currentand holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. IGT,IH[Tj]/IGT,IH[Tj=25C] 2.5 2.0 1.5 IGT ITSM(A) 160 Tj initial=25 C F=50Hz 120 80 1.0 0.5 IH 40 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 Number of cycles 10 100 1000 3/5 (R) TN1215-G Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. ITSM(A),I t(A s) 500 ITSM Tj initial=25C Tj=Tj max. It Fig. 8: On-state characteristics(maximum values). ITM(A) 100.0 10.0 100 Tj max.: Vto=0.77V Rt=30m 1.0 tp(ms) 10 1 2 5 10 Tj=25C VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxyprinted circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 80 70 60 50 40 30 20 10 0 0 4 8 12 S(Cu) (cm ) 16 20 24 28 32 36 40 Fig. 10: Typical reflow soldering heat profile, either for mounting on FR4 or metal-backed boards. T (C) 250 200 245C 215C 150 100 Epoxy FR4 board 50 0 Metal-backed board t (s) 0 40 80 120 160 200 240 280 320 360 4/5 (R) TN1215-G PACKAGE MECHANICAL DATA D2PAK REF. A A1 A2 B B2 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R A E L2 C2 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 4.30 2.49 0.03 0.70 1.40 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 0.40 0 8 0 0.60 0.017 1.36 0.047 9.35 0.352 10.28 0.393 5.28 0.192 15.85 0.590 1.40 0.050 1.75 0.055 0.016 8 4.60 0.169 2.69 0.098 0.23 0.001 0.93 0.027 0.055 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 0.181 0.106 0.009 0.037 D L L3 C C2 D E G L L2 L3 R V2 FOOT PRINT DIMENSIONS (in millimeters) MARKING: 16.90 TN1215 x00G 10.30 1.30 5.08 3.70 8.90 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 (R) |
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