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| TN0620 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 200V RDS(ON) (max) 6.0 ID(ON) (min) 1.0A VGS(th) (max) 1.6V Order Number / Package TO-92 TN0620N3 TO-220 TN0620N5 MIL visual screening available 7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Low threshold -- 1.6V max. s High input impedance s Low input capacitance -- 110pF typical s Fast switching speeds s Low on resistance s Free from secondary breakdown s Low input and output leakage s Complementary N- and P-channel devices Package Options Applications s Logic level interfaces - ideal for TTL and CMOS s Solid state relays s Battery operated systems s Photo voltaic drives s Analog switches s General purpose line drivers s Telecom switches Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-55 BVDSS BVDGS 20V -55C to +150C 300C G SGD DS TO-92 TO-220 TAB: DRAIN Note: See Package Outline section for dimensions. TN0620 Thermal Characteristics Package TO-92 TO-220 ID (continuous)* 0.4A 1.5A ID (pulsed) 2.0A 2.5A Power Dissipation @ TC = 25C 1W 45W C/W 125 2.7 jc C/W 170 70 ja IDR* 0.4A 1.5A IDRM 2.0A 2.5A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 200 0.6 1.6 -5.0 100 10 1.0 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 0.5 1.0 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 300 400 110 40 10 150 85 35 10 8 20 20 1.8 V ns ns VDD = 25V ID = 1.0A RGEN = 25 VGS = 0V, ISD = 1.0A VGS = 0V, ISD = 1.0A pF VGS = 0V, VDS = 25V f = 1 MHz 6.0 4.0 8.0 6.0 1.4 %/C m Typ Max Unit V V mV/C nA A mA Conditions VGS = 0V, ID = 2.0mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 0.25A VGS = 10V, ID = 0.5A VGS = 10V, ID = 0.5A VDS = 25V, ID = 0.5A A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% 10% tr t(OFF) td(OFF) tF 50 10% INPUT PULSE GENERATOR OUTPUT D.U.T. RL 7-56 TN0620 Typical Performance Curves Output Characteristics 4.0 4.0 Saturation Characteristics 3.2 VGS = 10V 3.2 ID (amperes) VGS = 8V 6V 1.6 4V 0.8 3V 2V 0 10 20 30 40 50 ID (amperes) 2.4 2.4 10V 8V 6V 1.6 4V 0.8 3V 2V 0 2 4 6 8 10 0 0 VDS (volts) Transconductance vs. Drain Current 1.0 VDS = 25V 40 50 TO-220 VDS (volts) Power Dissipation vs. Case Temperature 7 0.8 GFS (siemens) TA = 25C 0.4 TA = 150C PD (watts) 0.6 TA = -55C 30 20 0.2 10 TO-39 TO-92 0 0 0.5 1.0 1.5 2.0 2.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 10 1.0 TC ( C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 TO-220 PD = 45W TC = 25C TO-220 (DC) ID (amperes) 1.0 TO-92 (DC) 0.6 0.4 0.1 0.2 0.01 1 TC = 25C 10 100 1000 0 0.001 0.01 0.1 TO-92 PD = 1W TC = 25C 1 10 VDS (volts) tp (seconds) 7-57 TN0620 Typical Performance Curves BVDSS Variation with Temperature 1.1 15 On-Resistance vs. Drain Current 12 V GS = 5V BVDSS (normalized) RDS(ON) (ohms) 9 VGS = 10V 1.0 6 3 0.9 -50 0 50 100 150 0 0 0.8 1.6 2.4 3.2 4.0 Tj ( C) Transfer Characteristics 4.0 1.4 ID (amperes) V(th) and RDS Variation with Temperature 2.0 VDS = 25V 3.2 1.6 1.2 2.4 1.2 1.0 TA = 25C 1.6 RDS @ 10V, 0.5A 0.8 0.8 0.4 0.8 TA = 150C 0 0 2 4 6 8 10 0.6 0 150 -50 0 50 100 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj ( C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V C (picofarads) VGS (volts) CISS 100 6 VDS = 40V 178 pF 4 50 COSS 2 CRSS 0 0 10 20 30 40 100 pF 0 0 0.5 1.0 1.5 2.0 2.5 VDS (volts) QG (nanocoulombs) 7-58 RDS(ON) (normalized) VGS(th) (normalized) TA = -55C V (th)@ 1mA ID (amperes) |
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