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| TO-3PF 25A Triac TM2541B-L, TM2561B-L s Features qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=25A qGate trigger current: IGT=30mA max (MODE , , qIsolation voltage: VISO=2000V(AC, 1min.) qUL approved type available 5.450.1 15.60.2 1.5 4.4 1.5 External Dimensions (Unit: mm) 3.20.2 5.50.2 9.50.2 230.3 5.50.2 3.450.2 1.6 3.3 ) a b 3.350.2 +0.2 1.75-0.1 +0.2 2.15 -0.1 +0.2 1.05-0.1 5.450.1 (16.2) +0.2 0.65-0.1 (1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G) a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 6.5g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage Symbol VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO Ratings TM2541B-L 400 25 240 10 2 5 0.5 - 40 to +125 - 40 to +125 2000 TM2561B-L 600 Unit V A A V A W W C C Vrms Conditions RGK= , Tj= -40C to +125C Conduction angle 360, Tc=84C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C f f f 50Hz, duty 50Hz, duty 50Hz, duty 10% 10% 10% 50Hz Sine wave, RMS, Terminal to Case, 1 min. sElectrical Characteristics Parameter Off-state current On-state voltage Symbol IDRM VTM Ratings min typ 0.3 max 2.0 0.1 1.3 0.8 2.0 2.0 2.0 30 30 30 0.8 0.8 1.0 17 19 22 50 0.2 40 10 1.5 Unit mA V Conditions VD=VDRM, RGK= , Tj=125C VD=VDRM, RGK= , Tj=25C ITM=20A, TC=25C T2 , G V VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G + + - - - - + + + - Gate trigger voltage VGT - + + - T2 , G mA VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G V mA V/s C/W VD=1/2xVDRM, Tj=125C Tj=25C VD=400V, Tj=125C Junction to case Gate trigger current IGT - + Gate non-trigger voltage Holding current Rate-of-rise of off-state commutation voltage Thermal resistance VGD IH (dv/dt)c Rth 50 TM2541B-L, TM2561B-L vT - iT Characteristics (max) 100 Surge on-state current ITSM (A) 50 ITSM Ratings 280 240 200 160 120 80 40 0 Initial junction temperature Tj=125C ITSM 10 ms 1cycle IT(RMS) - PT(AV) Characteristics 32 Full-cycle sinewave Average on-state power PT(AV) (W) 28 Conduction angle :360 24 20 16 12 8 4 0 0 4 8 12 16 20 24 26 iT (A) Tj =125C On-state current Tj =25C 10 5 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 1 5 10 50 100 On-state voltage vT ( V ) Number of cycle RMS on-state current IT(RMS) (A) IT(RMS) - Tc Ratings 150 Full-cycle sinewave Conduction angle :360 Gate Characteristics 100 Mode VGT temperature characteristics (Typical) 1.2 (VD=6V RL=10 ) Gate trigger voltage VGT (V) Case temperature TC (C) 125 1.0 vGF (V) 100 75 50 25 0 0 4 8 12 16 20 24 26 RMS on-state current IT(RMS) (A) 10 VGM =10V PGM =0.5W -40C VGT=2.3V -40C IGT=75mA 25C IGT=30mA 25C VGT=2V PG(AV)=0.5W IGM =2A 0.8 Gate voltage 0.6 1 0.4 0.1 1 VGD=0.2V 10 100 1000 10000 0.2 -40 0 25 50 75 100 125 Gate current iGF (mA) Junction temperature Tj (C) IGT temperature characteristics (Typical) 100 Gate trigger current IGT (mA) 50 (VD=6V RL=10 ) Mode rth(j-c) - t Characteristics rth (j-c) (C/W) Transient thermal resistance 5 1 10 5 0.5 1 -40 0.1 1 10 0 25 50 75 100 125 102 103 104 105 Junction temperature Tj (C) t, Time (ms) 51 |
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