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| MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE TM150SA-6 * IT (AV) * VRRM Average on-state current .......... 150A Repetitive peak reverse voltage ................ 300V * VDRM Repetitive peak off-state voltage ................ 300V * TRIPLE ARMS * Non-Insulated Type APPLICATION Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (20.5) (26) (26) 3-9.0 K2 G2 13 2-6.5 K3 G3 K3 4 2.5 93 108 G3 2-1.0 Tab#110, t=0.5 4 A 2.5 4 K1 G1 K3 G3 CR3 CR2 K2 G2 CR1 K1 G1 K2 K1 12 LABEL A 8 21 45 60 34 K3 K2 K1 Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class 6 300 360 240 300 360 240 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Main terminal screw M8 Conditions Ratings 230 Unit A A A A2s A/s W W V V A C C N*m kg*cm N*m kg*cm g Three-phase, half-wave, TC=119C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=150C 150 3000 3.8 x 105 100 5.0 0.5 10 5.0 2.0 -40~+150 -40~+125 8.83~10..8 90~110 1.96~2.94 20~30 250 -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Tj=150C, VRRM applied Tj=150C, VDRM applied Tj=150C, ITM=450A, instantaneous meas. Tj=150C, VD=2/3VDRM Tj=25C, VD=6V, RL=2 Tj=150C, VD=1/2VDRM Tj=25C, VD=6V, RL=2 Junction to case (per 1/3 module) Case to fin, conductive grease applied (per 1/3 module) Test conditions Min. -- -- -- 200 -- 0.25 15 -- -- Typ. -- -- -- -- -- -- -- -- -- Max. 40 40 1.2 -- 3.0 -- 100 0.15 0.15 Unit mA mA V V/s V V mA C/ W C/ W Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 4000 Tj=150C RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 3200 2400 1600 800 0.8 1.2 1.6 2.0 2.4 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.200 TRANSIENT THERMAL IMPEDANCE (C/W) 0.175 0.150 0.125 0.100 0.075 0.050 0.025 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 GATE CHARACTERISTICS 4 3 2 VFGM=10V 10 1 PGM=5W 7 5 VGT=3.0V PFG(AV)= 3 0.50W 2 IGT= 10 0 100mA 7 5 Tj=25C 3 2 VGD=0.25V 10 -1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE VOLTAGE (V) GATE CURRENT (mA) IFGM=2.0A TIME (s) 200 180 MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 180 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 150 PER SINGLE ELEMENT (C) 140 360 AVERAGE ON-STATE POWER DISSIPATION (W) 160 140 120 100 80 60 40 20 0 0 40 80 =30 60 120 90 CASE TEMPERATURE RESISTIVE, INDUCTIVE LOAD 130 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 120 160 200 120 =30 60 90 120 180 110 100 0 40 80 120 160 200 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM150SA-6 MEDIUM POWER GENERAL USE NON-INSULATED TYPE 250 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 150 (C) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 270 DC 200 120 90 60 100 =30 360 RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 250 150 200 (A) PER SINGLE ELEMENT 360 180 140 CASE TEMPERATURE RESISTIVE, INDUCTIVE LOAD 150 130 120 50 110 =30 60 90 100 0 50 100 DC 120 180 270 150 200 250 0 0 50 100 AVERAGE ON-STATE CURRENT AVERAGE ON-STATE CURRENT (A) Feb.1999 |
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