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| (R) THBT200S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D.TM FEATURES DUAL BIDIRECTIONALCROWBARPROTECTION. PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 s. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has been especially designed to protect subscriber line cards.The THBT200 device is particularly suitable to protect ring generator relay against transient overvoltages. SIP3 COMPLIESWITHTHE FOLLOWINGSTANDARDS: CCITT K20 : VDE 0433 : VDE 0878 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700 s 5/310 s 10/700 s 5/310 s 1.2/50 s 1/20 s 2/10 s 2/20s 2/10 s 2/10s 10/1000s 10/1000s 1kV 25A 2kV 50A 1.5kV 40A 2.5kV 225A (*) 2.5kV 225A (*) 1kV 75A (*) SCHEMATIC DIAGRAM NC 1 T ip 2 GND 3 (*) with series resistors or PTC. R in g 4 TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 Ed: 2 1/7 THBT200S ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 s 5/310 s 8/20 s 2/10 s tp = 20ms Value 75 125 150 225 30 - 40 to + 150 150 230 Unit A ITSM Tstg Tj TL Non repetitive surge peak on-state current (F = 50Hz) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s A C C Note 1 : Pulse waveform : 10/1000s tr=10s 5/310s tr=5s 2/10s tr=2s tp=1000s tp=310s tp=10s % I PP 100 50 0 tr tp t THERMAL RESISTANCE Symbol Rth (j-a) Junction to ambient Parameter Value 80 Unit C/W 2/7 (R) THBT200S ELECTRICAL CHARACTERISTICS (Tamb = 25C). Symbol VRM IRM VBR VBO IH IBO IPP C Parameter Stand-offvoltage Leakage current at VRM Continuous reverse voltage Breakover voltage Holding current Breakover current Peak pulse current Capacitance IBO IH IRM VRM VBR VBO V Ipp I PARAMETERS RELATED TO ONE TRISIL (Between TIP and GND or RING and GND) IRM max. @ VRM VBR @ IR min. max. VBO @ IBO max. IH min. note 2 mA 800 mA 150 C max. note 3 pF 200 min. note 1 A 10 Note 1 : Note 2 : Note 3 : V 180 V 200 mA 1 V 290 mA 150 See reference test circuit 1 for IBO and VBO parameters. See test circuit 2. VR = 1V, F = 1MHz. 3/7 (R) THBT200S REFERENCE TEST CIRCUIT 1 FOR IBO and VBO parameters : t TEST PROCEDURE : Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. VOUT Selection - Device with VBO < 200 Volt - V OUT = 250 VRMS, R1 = 140 . - Device with VBO 200 Volt - VOUT = 480 VRMS, R2 = 240 . FUNCTIONAL HOLDING CURRENT (IH ) TEST CIRCUIT 2. R D.U.T. VBAT = - 48 V Surge generator - VP This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : 1) Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 s. 3) The D.U.T will come back off-state within 50 ms max. 4/7 (R) THBT200S APPLICATION CIRCUIT Typical line card protection concept RING GENERATOR -V bat LINE A T E S T R E L A Y S LINE B PTC TIP RING RELAY SLIC RING PTC THBT200S THDTxxx or LCPxxx FUNCTIONAL DESCRIPTION Line A Tip LINE A AND LINE B PROTECTION. Each line (TIP and RING) is protected by a bidirectional Trisil, which triggers at a maximum voltage equal to the VBO. Line B Ring 5/7 (R) THBT200S Fig. 1 : Relative variation of holding current versus junction temperature. IH [ Tj ] 1.0 0.8 0.6 0.4 IH [ Tj = 25C ] Fig. 2 : Surge peak current versus overload duration. ITSM(A) 40 F=50Hz Tj initial=25 C 30 20 10 0.2 Tj (C) 0.0 0 20 40 60 80 100 120 140 t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig. 3 : Peak on state voltage versus peak on state current (typical values). Fig. 4 : Capacitance versus reverse applied voltage (typical values). 1000 100 10 1 10 100 200 6/7 (R) THBT200S ORDER CODE THBT 200 S BIDIRECTIONAL TRISIL PACKAGE : S = SIP3 BREAKDOWN VOLTAGE MARKING : Package SIP3 Types THBT200S Marking THBT200S REF. Min. A a1 I A PACKAGE MECHANICAL DATA SIP3 Plastic DIMENSIONS Millimetres Inches Typ. Max. 0.280 0.110 1.90 0.059 10.15 0.50 1.35 0.38 2.54 7.62 10.50 3.30 1.50 0.130 0.059 1.75 0.053 0.50 0.015 0.100 0.200 0.413 0.020 0.069 0.020 0.075 0.400 Typ. Max. Min. 7.10 2.80 1.50 B a2 B b1 b2 a2 b1 b2 Z e e3 a1 L c1 c1 e e3 I L Z Packaging: Products supplied in antistatic tubes. Weight: 0.55g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7 (R) |
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