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| STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.3 - 12A TO-220/TO-220FP/I PAK MDmeshTM Power MOSFET TYPE STP12NM50/FP STB12NM50-1 s s s s s s VDSS 500V 500V RDS(on) <0.35 <0.35 ID 12 A 12 A 3 2 1 TYPICAL RDS(on) = 0.3 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-220 TO-220FP 1 2 3 DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) VISO Tstg Tj April 2000 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM Value STP(B)12NM50(-1) 500 500 30 12 7.5 48 110 0.88 6 --65 to 150 150 (1)ISD 12A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX. (*)Limited only by maximum temperature allowed Unit STP12NM50FP V V V 12(*) 7.5(*) 48(*) 35 0.28 2000 A A A W W/C V/ns V C C 1/10 (*)Pulse width limited by safe operating area This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STP12NM50/FP/STB12NM50-1 THERMAL DATA TO-220 / I PAK Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 1.13 62.5 0.5 300 TO-220FP 3.57 C/W C/W C/W C Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 C, ID = IAR, VDD = 50 V) Max Value 12 400 Unit A mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 30V Min. 500 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 6A VDS > ID(on) x RDS(on)max, VGS = 10V 12 Min. 3 Typ. 4 0.3 Max. 5 0.35 Unit V A DYNAMIC Symbol g fs (1) C iss Coss Crss Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Test Conditions VDS > ID(on) x RDS(on)max, ID = 6A VDS = 25V, f = 1 MHz, VGS = 0 Min. Typ. 5.2 1000 180 25 1.6 Max. Unit S pF pF pF Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2/10 STP12NM50/FP/STB12NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 400V, I D = 12A, VGS = 10V Test Conditions VDD = 250V, I D = 6 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) Min. Typ. 20 10 28 8 15 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions VDD = 400V, ID = 12 A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Min. Typ. 19 8 18 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (2) VSD (1) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, V GS = 0 ISD = 12 A, di/dt = 100A/s, VDD = 100V, T j = 150C (see test circuit, Figure 5) 350 5.25 30 Test Conditions Min. Typ. Max. 12 48 1.5 Unit A A V ns C A Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area For TO-220 / I PAK Safe Operating Area For TO-220FP 3/10 STP12NM50/FP/STB12NM50-1 Thermal Impedance For TO-220 / I PAK Thermal Impedance For TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/10 STP12NM50/FP/STB12NM50-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage Temperature vs Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STP12NM50/FP/STB12NM50-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STP12NM50/FP/STB12NM50-1 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 E mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40 inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151 A C D1 L2 F1 D G1 Dia. F2 F L5 L7 L6 L9 L4 G H2 P011C 7/10 STP12NM50/FP/STB12NM50-1 TO-220FP MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 8/10 G STP12NM50/FP/STB12NM50-1 TO-262 (I2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055 DIM. A C2 B2 B E L1 L2 D L P011P5/E e A1 C 9/10 STP12NM50/FP/STB12NM50-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10 |
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