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| PD - 50047D GA250TS60U "HALF-BRIDGE" IGBT INT-A-PAK Features * Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved Ultra-FastTM Speed IGBT VCES = 600V VCE(on) typ. = 1.9V @VGE = 15V, IC = 250A Benefits * Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing Absolute Maximum Ratings Parameter VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector CurrentQ Peak Switching CurrentR Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Max. 600 250 500 500 500 20 2500 780 400 -40 to +150 -40 to +125 Units V A V W C Thermal / Mechanical Characteristics Parameter RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3 T Weight of Module Typ. -- -- 0.1 -- -- 200 Max. 0.16 0.35 -- 6.0 5.0 -- Units C/W N. m g www.irf.com 1 05/14/02 GA250TS60U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES VCE(on) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- VGE = 0V, IC = 1mA Collector-to-Emitter Voltage -- 1.9 2.3 VGE = 15V, IC = 250A -- 2.0 -- V VGE = 15V, IC = 250A, TJ = 125C Gate Threshold Voltage 3.0 -- 6.0 IC = 1.5mA VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 1.5mA gfe Forward Transconductance T -- 204 -- S VCE = 25V, IC = 250A ICES Collector-to-Emitter Leaking Current -- -- 1.0 mA VGE = 0V, VCE = 600V -- -- 10 VGE = 0V, VCE = 600V, T J = 125C VFM Diode Forward Voltage - Maximum -- 4.0 -- V IF = 250A, V GE = 0V -- 4.1 -- IF = 250A, VGE = 0V, TJ = 125C IGES Gate-to-Emitter Leakage Current -- -- 250 nA VGE = 20V Dynamic Characteristics - TJ = 125C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 1050 1600 VCC = 400V 146 220 nC IC = 250A 525 790 TJ = 25C 173 -- RG1 = 15, RG2 = 0, 242 -- ns IC = 250A 1020 -- VCC = 360V 190 -- VGE = 15V 10.5 -- mJ 20.0 -- 30.5 45 23400 -- VGE = 0V 1460 -- pF VCC = 30V 300 -- = 1 MHz 183 -- ns IC = 250A 124 -- A RG1 = 15 11275 -- C RG2 = 0 1700 -- A/s VCC = 360V di/dt=1300A/s 2 www.irf.com GA250TS60U 200 F o r b o th : 160 LOAD CURRENT (A) D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 170 W S q u a re w a v e : 60 % of ra ted vo ltag e 120 80 I 40 Id e a l d io d e s 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 25 oC 25 TJ = 150 o C 25 TJ = 150 oC 100 100 TJ = 25 oC 10 10 1 2 V = 15V 20s PULSE WIDTH GE 3 4 1 5 6 7 V = 50V 5s PULSE WIDTH VCE = 25V CC 80s PULSE WIDTH 8 9 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 GA250TS60U 250 2.2 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 200 2.0 I C = 250 A 1.8 150 1.6 I C = 125 A 100 1.4 I C =62.5 A 50 1.2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 T he rm a l R es pon se (Zth JC ) 0.1 D = 0 .5 0 P DM 0 .2 0 t 0 .1 0 0 .0 5 1 t2 0.02 0 .0 1 0.01 0.0001 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 0.001 0.01 0.1 1 Notes: 1. Duty factor D = t 1 / t2 2. Peak TJ = PDM x Z thJC + TC A 1000 10 100 t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA250TS60U 42000 36000 30000 24000 18000 12000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 250A 16 C, Capacitance (pF) Cies 12 8 C oes C res 4 6000 0 1 10 100 0 0 200 400 600 800 1000 1200 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 45 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 360V V GE = 15V TJ =125 C 25 I C = 250A 40 100 RG1 =15;RG2 = 0 G = 15Ohm VGE = 15V VCC = 360V IC = 250 A IC = 125 A 10 35 IC = 62.5 A 30 25 20 0 10 20 30 40 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA250TS60U 70 Total Switching Losses (mJ) T J = 125 C 60 VCC = 360V VGE = 15V 50 40 30 20 10 0 0 100 200 300 400 500 IC , Collector-to-Emitter Current ( A ) RG1=15;RG2 = 0 G = 15Ohm 700 600 V G E E 20V G= T J = 125C V C E measured at term inal (Peak Voltage) V CE m easured at terminal (Peak Voltage) 500 400 SAFE OPERATING AREA 300 200 100 0 0 100 200 300 400 500 600 A 700 I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Reverse Bias SOA 1000 20000 I F = 50 0A I F = 25 0A In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) I F = 12 5 A 15000 100 Q R R - (nC ) 10000 TJ = 2 5 C TJ = 1 2 5 C 5000 VR = 36 0V T J = 1 25 C T J = 2 5C 10 1.0 2.0 3.0 4.0 5.0 6.0 0 500 1000 F o rw a rd V o lta g e D ro p - V FM (V ) d i f /dt - (A /s) 1500 2000 Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current Fig. 14 - Typical Stored Charge vs. dif/dt 6 www.irf.com GA250TS60U 250 200 I F = 5 00A I F = 2 50A I F = 125A 150 200 I F = 500A I = 250A F I = 12 5A F trr - (n s) - (A ) 150 50 VR = 3 6 0 V T J = 1 2 5 C TJ = 2 5 C 100 500 1000 I RR M 100 VR = 3 6 0 V T J = 1 2 5 C TJ = 2 5 C d i f /d t - (A / s ) 1500 2000 0 500 1000 d i f /d t - (A / s) 1500 2000 Fig. 15 - Typical Reverse Recovery vs. dif/dt Fig. 16 - Typical Recovery Current vs. dif/dt www.irf.com 7 GA250TS60U 90% Vge +Vge Vce Ic 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = Vce Ic dt t1 + 5 S V c e ic d t t1 Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id ddt Ic t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t4 V d idIc t dt Vd d t3 t1 Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 17d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com GA250TS60U V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 17e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 18. Clamped Inductive Load Test Circuit Figure 19. Pulsed Collector Current Test Circuit www.irf.com 9 GA250TS60U Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. R See fig. 17 S For screws M6. T For screws M5. U Pulse width 50s; single shot. Case Outline -- INT-A-PAK 94.70 93.70 80.30 79.70 3.689] [3.728 NOTES : 1. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 2. CONTROLLING DIMENS ION: MILLIMETER. 4.50 3.50 6 7 17.50 16.50 1 8 9 2 3 5 4 6.80 2X O 6.20 .650] [.689 .138] [.177 [ 3.161 3.138] 2X 23.50 22.50 [.925 .886] 11 10 34.70 33.70 1.327] [1.366 [.267 .244] 4X FAS TON TAB (110) 2.8 x 0.5 [.110 x .020] 3X M5 8 [.314] MAX. 42.00 41.00 1.614] [1.654 8.00 6.60 .260] [.315 24.00 23.00 .906] [.945 30.50 29.00 1.142] [1.201 0.15 [.0059] CONVEX 92.10 91.10 8.65 7.65 [.341 .301] 32.00 31.00 2X 13.30 12.70 .500] [.524 [3.626 3.587] [ 1.260 1.220] Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/02 10 www.irf.com |
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