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| N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 FEATURES * 350 Volt VDS RDS(on)=35 ZVN2535A D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j :T stg VALUE 350 90 1 20 700 -55 to +150 UNIT V mA A V mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) SYMBOL MIN. BV DSS V GS(th) I GSS I DSS 350 1 3 20 10 400 250 35 100 70 10 4 7 7 16 10 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns ( 1 ) V DD 25V, I D=100mA V DS=25 V, V GS=0V, f=1MHz I D=1mA, V GS=0V ID=1mA, V DS= V GS V GS= 20V, V DS=0V V DS=350V, V GS=0 V DS=280V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V,I D=100mA V DS=25V,I D=100mA I D(on) R DS(on) Forward Transconductance (1)( g fs 2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) C iss C oss C rss t d(on) tr t d(off) tf 3-372 Measured under pulsed conditions. Width=300s. Duty cycle 2% ZVN2535A TYPICAL CHARACTERISTICS 800 VGS= 10V 6V 500 ID(On) Drain Current (mA) ID(On)Drain Current (mA) 700 600 500 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 450 400 350 300 250 200 150 100 50 0 0 5 10 15 20 VGS= 10V 4V 4V 3V 3V 100 25 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics VDS-Drain Source Voltage (Volts) 20 16 14 12 10 8 6 4 2 0 1 2 3 4 5 6 7 8 9 100mA 50mA 10 ID= 250mA 400 ID(On) Drain Current (mA) 18 300 VDS= 10V 200 100 0 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics 125 250 C-Capacitance (pF) 100 75 50 25 Coss Crss 0 10 20 30 40 50 gfs-Transconductance (mS) 200 150 100 50 0 0 100 200 300 400 500 Ciss VDS-Drain Source Voltage (Volts) ID- Drain Current (mA) Capacitance v drain-source voltage Transconductance v drain current 3-373 ZVN2535A TYPICAL CHARACTERISTICS gfs-Forward Transconductance (mS) 250 16 VDS= 100V ID= 300mA 350V 200V VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 0 200 150 100 50 0 2 4 6 8 10 0.5 1.0 1.5 2.0 2.5 3.0 VGS-Gate Source Voltage (Volts) Q-Charge (nC) Transconductance v gate-source voltage RDS(on)-Drain Source On Resistance () VGS=3V 100 90 80 70 60 50 40 30 20 4V 10V Gate charge v gate-source voltage 2.4 Normalised RDS(on) and VGS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 VGS=VDS ID=1mA Gate T hresho ld Volt age VG S(th) nai Dr ce ur So ce an st si Re RD ) on S( VGS=10V ID=100mA 10 10 100 1000 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 ID-Drain Current (mA) T-Temperature (C) On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature 3-374 |
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