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 SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 2 - FEBRUARY 1996 FEATURES: * VDS - 200V * RDS(ON) - 10 7
ZVN2120G
D
PARTMARKING DETAIL - ZVN2120 D G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source Voltage Continuous Drain Current at T amb=25C Pulsed Drain Current Gate-Source Voltage Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V DS ID I DM V GS P tot T j:T stg VALUE 200 320 2 20 2 -55 to +150 UNIT V mA A V W C
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Drain-Source Breakdown Voltage SYMBOL MIN. BV DSS 200 1 3 20 10 100 500 10 100 85 20 7 8 8 20 12 MAX. UNIT CONDITIONS. V V nA A A mA mS pF pF pF ns ns ns ns V DD25V, I D=250mA V DS=25V, V GS=0V, f=1MHz I D=1mA, V GS=0V I D =1mA, V DS= V GS V GS= 20V, V DS=0V V DS=200V, V GS=0V V DS=160V, V GS=0V, T=125C(2) V DS=25V, V GS=10V V GS=10V, I D=250mA V DS=25V, I D=250mA
Gate-Source Threshold Voltage V GS(th) Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) I GSS I DSS
I D(on) R DS(on)
Forward Transconductance(1)(2) g fs Input Capacitance (2) Common Source Output Capacitance (2) C iss C oss
Reverse Transfer Capacitance (2) Crss Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) t d(on) tr t d(off) tf
(1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
3 - 390
ZVN2120G
TYPICAL CHARACTERISTICS
ID(on) -On-State Drain Current (Amps)
VGS=10V 8V 7V 6V 5V
ID(on) -On-State Drain Current (Amps)
2.0
1.4 1.2
10V
VGS=
8V 7V 6V 5V 4V
1.6 1.2
1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8
0.8
4V
0.4
3V 2V 0 10 20 30 40 50
3V
0
2V
10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
ID(On)-On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
20
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 9
VDS= 25V
16 12 ID= 1.0A
10V
8
4 0.5A 0 0 2 4 6 8 0.1A 10
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
RDS(ON) -Drain Source Resistance ()
100
2.4
Normalised RDS(on) and VGS(th)
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0
10
ID= 1.0A 0.5A 0.1A
Dr
rc ou -S ain
ist es eR
ce an
RD
S(
) on
VGS=10V ID=250mA
VGS=VDS ID=1mA Gate Th reshold Voltage VGS(TH) 20 40 60 80 100 120 140 160 180
1 1 2 3 4 5 6 7 8 9 10 20
VGS-Gate Source Voltage (Volts)
Tj-Junction Temperature (C)
On-resistance vs gate-source voltage
Normalised RDS(on) and VGS(th) v Temperature
3 - 391
ZVN2120G
TYPICAL CHARACTERISTICS
500 500
gfs-Transconductance (mS)
gfs-Transconductance (mS)
400 300 200 100 VDS=25V
400 300 200 100 0 0 2 4 6 8 10 VDS=25V
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID(on)- Drain Current (Amps)
VGS-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
16
VGS-Gate Source Voltage (Volts)
100 80 60 40 20 Coss Crss 0 10 20 30 40 50 Ciss
14 12 10 8 6 4 2 0
ID=700mA
VDS= 50V 100V 150V
C-Capacitance (pF)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3 - 392


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