Part Number Hot Search : 
SSD1331 APC5860 GS9078A SHEET 05111 SS100 NJM2822F 74AHC
Product Description
Full Text Search
 

To Download VN2406D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
N-Channel 240-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number
TN2410L VN2406D VN2406L VN2410L VN2410LS 240
V(BR)DSS Min (V)
rDS(on) Max (W)
10 @ VGS = 4.5 V 6 @ VGS = 10 V
VGS(th) (V)
0.5 to 1.8 0.8 to 2 0.8 to 2 0.8 to 2 0.8 to 2
ID (A)
0.18 1.12 0.18 0.18 0.19
6 @ VGS = 10 V
10 @ VGS = 10 V 10 @ VGS = 10 V
FEATURES
D D D D D Low On-Resistance: 3.5 W Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability
BENEFITS
D D D D D Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature "Run-Away"
APPLICATIONS
D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control
'Device Marking Front View
TO-226AA
(TO-92) S G D 1
TN2410L
"S" TN 2410L xxyy
TO-220AB
(Tab Drain) 1 'Device Marking Front View S G D
TO-92S
(Copper Lead Frame) 1 'Device Marking Front View
2
VN2406L
"S" VN 2406L xxyy
G D S
VN2406D
2 VN2406D "S" xxyy 3 Top View VN2406D "S" = Siliconix Logo xxyy = Date Code 2
VN2410LS
"S" VN 2410LS xxyy "S" = Siliconix Logo xxyy = Date Code Top View VN2410LS
3 Top View TN2410L VN2406L VN2410L
VN2410L
"S" VN 2410L xxyy "S" = Siliconix Logo xxyy = Date Code
3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation TA= 25_C TA= 100_C TA= 25_C TA= 100_C
Symbol
VDS VGS ID IDM PD RthJA TJ, Tstg
TN2410L
240 "20 0.18 0.11 1 0.8 0.32 156
VN2406Db
240 "20 1.12 0.7 3 20 8 6.25c
VN2406L
240 "20 0.18 0.11 1.7 0.8 0.32 156 -55 to 150
VN2410L
240 "20 0.18 0.11 1.7 0.8 0.32 156
VN2410LS
240 "20 0.19 0.12 2 0.9 0.4 139
Unit
V
A
W _C/W _C
Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range
Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case Document Number: 70204 S-04279--Rev. F, 16-Jul-01 www.vishay.com
11-1
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
TN2410L VN2406D/L VN2410L/LS
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min
Max
Unit
V(BR)DSS VGS(th)
VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "15 V
260 1.4
240 0.5 1.8
240 0.8 2 "100 "500 "10
240 0.8 2 "100 "500 nA V
Gate-Body Leakage
IGSS
TJ = 125_C VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 125_C 0.01 1
1 100 10 500 10 500 A 10 mA m
Zero Gate Voltage Drain Current
IDSS
VDS = 120 V, VGS = 0 V TJ = 125_C
On-State Drain Currentb
VDS = 10 V, VGS = 4.5 V ID(on) VDS = 15 V, VGS = 10 V VGS = 2.5 V, ID = 0.1 A VGS = 3.5 V, ID = 0.05 A
0.8 1.5 7.5 4.5 4 7.5 3.5 6.5 500 530 115
0.25 1 10 15 10 20 6 14.8 100 300 135 50 20 135 50 20 300 135 50 20 pF mS 10 24.7 W 1
Drain-Source On-Resistanceb
VGS = 4.5 V, ID = 0.2 A rDS(on) TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C
Forward Transconductanceb Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 10 V, ID = 0.2 A gfs Ciss Coss Crss VDS = 25 V, VGS = 0 V f = 1 MHz VDS = 10 V, ID = 0.5 A
30 5
Switchingc
tON Turn-On Time td(on) tr tOFF Turn-Off Time td(off) tf Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v 2%. c. Switching time is essentially independent of operating temperature. VDD = 60 V, RL = 150 W ID ^ 0.4 A, VGEN = 10 V RG = 25 W 5 3 2 26 20 6 60 23 34 23 34 VNDB24 35 8 8 8 8 ns
www.vishay.com
11-2
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
1.0 VGS = 10 V 4.0 V ID - Drain Current (mA) 200
Output Characteristics for Low Gate Drive
VGS = 3 V 2.6 V
0.8 ID - Drain Current (A)
160 2.4 V 120 2.2 V 80 2.0 V 40
0.6
3.5 V
0.4
3.0 V 2.5 V
0.2 2.0 V 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)
1.8 V 0 0 0.4 0.8 1.2 1.6 2.0 VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
0.5 VDS = 15 V 0.4 TJ = -55_C ID - Drain Current (A) 0.3 25_C 125_C 10 rDS(on) - On-Resistance ( ) 12
On-Resistance vs. Gate-to-Source Voltage
8
6 1.0 A 4 I D = 0.1 A 2 0.5 A
0.2
0.1
0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V)
0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V)
On-Resistance vs. Drain Current
6 VGS = 10 V rDS(on) - Drain-Source On-Resistance ( ) 5 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) 2.25
Normalized On-Resistance vs. Junction Temperature
VGS = 10 V 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 ID = 0.5 A
4
3
2
1
0 0 0.1 0.2 0.3 0.4 0.5 0.6 ID - Drain Current (A)
-50
-10
30
70
110
150
TJ - Junction Temperature (_C) www.vishay.com
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
11-3
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10 VDS = 5 V TJ = 150_C ID - Drain Current (mA) 1 C - Capacitance (pF) 400 VGS = 0 V f = 1 MHz 300
Capacitance
200 Ciss 100
0.1
25_C
Coss Crss
-55_C 0.01 0.3 0.7 1.1 1.5 0 0
10
20
30
40
50
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Gate Charge
15.0 ID = 0.5 A VGS - Gate-to-Source Voltage (V) 12.5 t - Switching Time (ns) 100
Load Condition Effects on Switching
VDS = 60 V RG = 25 W td(off) tf 10
10.0 VDS = 120 V 7.5 192 V
5.0
td(on)
2.5 tr 0 0 400 800 1200 1600 2000 Qg - Total Gate Charge (pC) 1 0.01 0.1 ID - Drain Current (A) 1
Drive Resistance Effects on Switching
100 VDD = 60 V RL = 150 W ID = 0.4 A td(off) t - Switching Time (ns) IS - Source Current (A) 1
Source-Drain Diode Forward Voltage
TJ = 150_C 0.1 TJ = 25_C
10
tf
td(on) tr
1 1 2 5 10 20 50 100 RG - Gate Resistance (W)
0.01 0 0.5 1.0 1.5 2.0 2.5 VSD - Source-Drain Voltage (V)
www.vishay.com
11-4
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
TN2410L, VN2406D/L, VN2410L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
t1 t2 1. Duty Cycle, D = t1 t2 Notes: PDM
0.01 Single Pulse 0.01 0.1 1 10 100
2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t)
1K
10 K
t1 - Square Wave Pulse Duration (sec)
Document Number: 70204 S-04279--Rev. F, 16-Jul-01
www.vishay.com
11-5


▲Up To Search▲   

 
Price & Availability of VN2406D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X