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| UG30APT thru UG30DPT Vishay Semiconductors formerly General Semiconductor Dual Ultrafast Plastic Rectifier TO-247AD 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 0.078 REF (1.98) 10 Reverse Voltage 50 to 200V Forward Current 30A Features 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. BOTH SIDES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diodes * Ultrafast, 15 nanosecond typical recovery time * Low leakage current * Glass passivated * Soft recovery characteristics * Excellent high temperature switching 1 2 3 0.086 (2.18) 0.076 (1.93) 1 REF. BOTH SIDES 0.118 (3.0) 0.108 (2.7) Mechanical Data Case: JEDEC TO-247AD molded plastic body over passivated chips Terminals: Plated leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C, 0.16" (4.06mm) from case for 10 seconds Polarity: As marked Mounting Position: Any Weight: 2.2 oz., 6.3 g Ratings at 25C ambient temperature unless otherwise specified. 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6) 0.117 (2.97) PIN 1 PIN 3 PIN 2 CASE 0.030 (0.76) 0.020 (0.51) 0.225 (5.7) 0.205 (5.2) 0.048 (1.22) 0.044 (1.12) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC=120C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) at TC=120C Typical thermal resistance (1) Symbol UG30APT UG30BPT UG30CPT UG30DPT VRRM VRMS VDC IF(AV) IFSM RJC TJ, TSTG 50 35 50 100 70 100 30 300 2.0 -65 to +150 150 105 150 200 140 200 Unit V V V A A C/W C Operating and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Maximum instantaneous forward voltage per leg at 15A 30A 10A TJ=100C Maximum DC reverse current at rated DC blocking voltage per leg Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Maximum reverse recovery time at IF=15A, VR=30V, di/dt=50 A/s, IRR=10% IRM Maximum recovered stored charge IF=15A, VR=30V, di/dt=50 A/s, IRR=10% IRM Typical junction capacitance at 4.0V, 1MHZ TJ= 25C TJ=100C TJ=25C TJ=100C TA =25C TA =100C VF IR trr trr Qrr CJ 1.0 1.15 0.85 15 800 20 35 50 22 50 70 V A ns ns nC pF Note: (1) Thermal resistance from junction to case per leg mounted on heatsink Document Number 88762 03-Jul-02 www.vishay.com 1 UG30APT thru UG30DPT Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve 36 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 1,000 Average Forward Rectified Current (A) 30 24 Peak Forward Surge Current (A) Resistive or Inductive Load TC = 120C 8.3ms Single Half Sine-Wave (JEDEC Method) 18 100 12 6 0 0 25 50 75 100 125 150 175 10 1 10 100 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 100 1,000 Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Forward Current (A) Instantaneous Reverse Leakage Current (A) 10 TJ = 25C Pulse width = 300s 1% Duty Cycle 100 TJ = 100C 10 TJ = 25C 1 1 0.1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Reverse Switching Characteristics Per Leg 60 Fig. 6 - Typical Junction Capacitance 100 Recovered Store Change / Reverse Recovery Time (nC/ns) IF = 15A VR = 30V 50 di/dt = 150A/s di/dt = 20A/s di/dt = 100A/s di/dt = 50A/s di/dt = 100A/s di/dt = 150A/s di/dt = 50A/s di/dt = 20A/s 40 30 Junction Capacitance (pF) 10 20 10 TJ = 125C f = 1.0 MHz Vsig = 50mVp-p 1 0.1 1 10 100 0 0 25 50 75 100 125 150 175 Junction Temperature (C) www.vishay.com 2 Reverse Voltage (V) Document Number 88762 03-Jul-02 |
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