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| Power Transistor Array STA335A Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 355 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 -55 to +150 Unit V V V A A W W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse Ratings 10max 10max 355 500min 0.5max 150min 11.30.2 2.30.2 9.00.2 (Ta=25C) Unit A A V V mJ External Dimensions STA3 (LF400A) 20.20.2 b a 4.70.5 0.50.15 Typical Switching Characteristics VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2 C1.50.5 1.00.25 7*2.54=17.780.25 (2.54) 0.50.15 1 2 C 3 B 4 E 5 E 6 B 7 C 8 a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) A 10 m A s VCE (sat) -- IB Temperature Characteristics 1 5mA 4mA (IC = 1A) s IC -- VBE Temperature Characteristics (typ.) 4 VCE = 4V 3 15m 8m A A 6m 2 VCE (sat) (V) 3mA 2mA IB=1mA 3 IC (A) IC (A) 0.5 1 Ta = 125C 75C 25C -55C 2 1 Ta = -55C 25C 75C 125C 0 0 1 2 3 0 0.002 0.01 0.05 0.1 0.4 0 0 0.5 1.0 1.20.2 4.00.2 1.5 VCE (V) IB (A) VBE (V) s hFE -- IC Temperature Characteristics (typ.) 5000 (VCE = 4V) s ton*tstg*tf -- IC Characteristics (typ.) 20 s j-a -- t Characteristics Single pulse tstg 20 VCE = 12V IB1 = -IB2 = 5mA ton*tstg*tf (S) 10 5 10 hFE 1000 500 Ta = 125C 75C 25C -55C (C/W) tf ton 0.1 0.5 1 5 j-a 5 1 0.5 1 0.5 0.3 0.05 100 0.01 0.05 0.1 0.5 1 3 0.1 0.1 1 10 100 1000 5000 IC (A) Ic (A) t (ms) s Safe Operating Area (single pulse) 10 5 10 s PT -- Ta Derating 15 (per element) Equivalent Circuit Diagram 1m 10 0m s W ith in fin ite m s 10 he 2 at si nk (A ll ci rc ui 7 DC PT (W) IC (a) 1 (T c= ts op 25 C ) er 5 Withou t heat sink (A ll at e) 3 6 0.5 circuits operat e) 4 150 5 0.2 2 5 10 50 0 0 50 100 VCE (V) Ta (C) 63 |
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