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| SMBTA42/MMBTA42 NPN Silicon Transistor for High Voltages High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 (PNP) 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 VPS05161 Type Marking 1=B Pin Configuration 2=E 3=C Package SOT23 SMBTA42/MMBTA42 s1D Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Base current Total power dissipation, TS = 74 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Value 300 300 6 500 100 360 150 -65 ... 150 Unit V mA mW C 210 K/W Feb-21-2003 SMBTA42/MMBTA42 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 100 A, IC = 0 Collector cutoff current VCB = 200 V, IE = 0 Collector cutoff current VCB = 200 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA Base-emitter saturation voltage 1) IC = 20 mA, IB = 2 mA VBEsat 0.9 VCEsat hFE 25 40 40 0.5 V IEBO 100 nA ICBO 20 A ICBO 100 nA V(BR)EBO 6 V(BR)CBO 300 V(BR)CEO 300 V typ. max. Unit AC Characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 20 V, f = 1 MHz Ccb 4 pF fT 50 MHz 1) Pulse test: t < 300s; D < 2% 2 Feb-21-2003 SMBTA42/MMBTA42 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 10V, f =100MHz 400 10 3 MHz fT SMBTA 42/43 EHP00839 mW 320 280 Ptot 240 200 160 10 2 5 120 80 40 0 0 15 30 45 60 75 90 105 120 C 150 TS 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 C Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC SMBTA 42/43 EHP00840 Operating range IC = f (VCEO) TA = 25C, D = 0 10 3 mA SMBTA 42/43 EHP00841 D= tp T tp C T 10 2 10 2 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 s 10 1 5 DC 10 5 0 100 s 1 ms 100 ms 500 ms 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 -1 10 0 5 10 1 5 10 2 V5 V CEO 10 3 3 Feb-21-2003 SMBTA42/MMBTA42 Collector cutoff current ICBO = f (TA) VCB = 160V SMBTA 42/43 EHP00842 Collector current IC = f (VBE) VCE = 10V SMBTA 42/43 EHP00843 10 4 nA 10 5 3 10 3 mA max C 10 2 5 CBO 10 2 5 10 1 5 10 5 0 10 1 typ 5 10 0 5 10 -1 0 50 100 TA C 150 10 -1 0 0.5 1.0 V BE V 1.5 DC current gain hFE = f (IC ) VCE = 10V 10 3 5 h FE 10 2 5 SMBTA 42/43 EHP00844 10 1 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 3 C 4 Feb-21-2003 |
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