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| NTE77 Silicon NPN Transistor Broadband CATV Driver Description: The NTE77 is an NPN transistor in a TO39 type case designed to be utilized in broadband and linear amplifier circuitry requiring low noise and low intermodulation distortion. This device is suitable for use in CATV driver stages in trunk line, bridger, and line extender amplifiers. Features: D High Gain-Bandwidth Product: fT = 1.5GHz Typ D Low Intermodulation, Low Cross-Modulation Distortion: X-MOD = -57dB D Low Noise Figure: NF = 2.7dB Typ D Low Output Capacitance: Cob = 3.5pF Max @ VCB = 30V Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +50C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 5mA, IB = 0, Note 1 V(BR)CBO IC = 0.1mA, IE = 0, Note 1 V(BR)EBO IE = 0.1mA, IC = 0 ICEO VCE =, 28V, IB = 0 30 50 5 - - - - - - - - 0.1 V V V mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulsed through 25mH Inductor. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Current Gain-Bandwidth Product Collector Output Capacitance Collector Input Capacitance Functional Test Noise Figure Narrow Band Broad Band Power Gain at Optimum Noise Figure Cross-Modulation Second Order Distortion NFNB NFBB GVE VCE = 10V, IC = 10mA, f = 200MHz VCE = 15V, IC = 50mA, f = 216MHz VCE = 15V, IC = 50mA, f = 260MHz - - 6.8 - - 2.7 7.0 7.2 -60 -60 - 8.0 - -57 -57 dB dB dB dB dB fT Cob Cib VCE = 15V, IC = 50mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz 1500 1800 - - 2.5 8.0 - 3.5 10 MHz pF pF hFE VCE = 15V, IC = 50mA 30 - 300 Symbol Test Conditions Min Typ Max Unit X-MOD VCE = 15V, IC = 50mA, PO = +45dBmV, Note 2 2nd O VCE = 15V, IC = 50mA, PO = +45dBmV, Note 3 Note 2. 12 Channel Flat -- NCTA Channel 2 through 12 100% Mod (Square wave) Channel 13CW Note 3. Channel 2 and Channel G Intermod Product on Channel 13 .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
Price & Availability of NTE77
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