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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D183 BYX120G High-voltage soft-recovery controlled avalanche rectifier Product specification Supersedes data of May 1996 1996 Sep 26 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability. APPLICATIONS * Car ignition systems * Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass package, using a high temperature alloyed construction. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. BYX120G The package is designed to be used in an insulating medium such as resin, oil or SF6 gas. handbook, halfpage k a MSB026 The cathode is marked by an orange band on the body. Fig.1 Simplified outline (SOD88A) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VRWM IF(AV) IFRM IFSM PRSM Tstg Tj PARAMETER repetitive peak reverse voltage crest working reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current non-repetitive peak reverse power dissipation storage temperature junction temperature continuous maximum 30 mins t = 10 ms half sinewave; Tj = Tj max prior to surge; VR = VRWMmax t = 10 s; triangular pulse; Tj = Tj max prior to surge CONDITIONS MIN. - - - - - - -65 -65 -65 TYP. 3 3 100 5 15 3 +200 +180 +200 MAX. kV kV mA A A kW C C C 1996 Sep 26 2 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF V(BR)R IR PARAMETER forward voltage reverse avalanche breakdown voltage reverse current IR = 0.1 mA VR = VRWMmax; Tj = 180 C CONDITIONS IF = 250 mA MIN. - 3.5 - TYP. - - - BYX120G MAX. 5 - 75 V UNIT kV A THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS Tamb = Tleads VALUE 55 UNIT K/W 1996 Sep 26 3 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifier PACKAGE OUTLINE BYX120G handbook, full pagewidth 0.81 max 3.8 max 30.5 min 8 max 30.5 min MSA215 - 3 Dimensions in mm. The marking band indicates the cathode. Fig.2 SOD88A. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 26 4 |
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