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Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
FEATURES
* Low forward volt drop * Ultra fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab
BYM358DX
SYMBOL
modulator damper
QUICK REFERENCE DATA
DAMPER VR=1500 V
3
MODULATOR VR=600 V VF 1.08 V IF(peak) = 7 A IFSM 70 A trr 60 ns
1
VF 1.5 V IF(peak) =7 A
2
IFSM 66 A trr 170 ns
GENERAL DESCRIPTION
Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in PC monitors. The BYM358DX contains diodes with performance characteristics designed specifically for applications from 32kHz to 120kHz The BYM358DX series is supplied in the conventional leaded SOT399 package.
PINNING
PIN 1 2 3 DESCRIPTION modulator anode common anode/cathode damper cathode
SOT399
case
123
LIMITING VALUES
Tj = 25 C unless otherwise stated DAMPER SYMBOL VRSM VRRM VRWM IF(peak) IF(RMS) IFSM PARAMETER Peak non-repetitive reverse voltage. Peak repetitive reverse voltage Crest working reverse voltage Peak forward current RMS forward current Peak non-repetitive forward current 31-70 kHz monitor. sinusoidal;a=1.57 t = 10 ms t = 8.3 ms sinusoidal;with reapplied VRWM(MAX) CONDITIONS MIN MAX 1500 1500 1300 7 15.7 60 66 MODULATOR MIN MAX 600 600 600 7 14.1 70 77 UNIT V V V A A A A
Tstg TJ
Storage temperature Operating junction temperature
-40 -
150 150
-40 -
150 150
C C
March 2000
1
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals to external heatsink CONDITIONS R.H. 65 % ; clean and dustfree MIN. TYP. -
BYM358DX
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
22
-
pF
THERMAL RESISTANCES
DAMPER SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air. TYP. 35 MAX. 3.5 MODULATOR TYP. 35 MAX. 4 UNIT K/W K/W
STATIC CHARACTERISTICS OF DAMPER
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125C VR = VRWM VR = VRWM Tj = 100 C TYP 1.3 1.2 10 300 MAX. 1.6 1.5 100 500 UNIT V V A A
STATIC CHARACTERISTICS OF MODULATOR
Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current. CONDITIONS IF = 8 A IF = 8 A; Tj = 150C IF = 20 A VR = VRWM VR = VRWM Tj = 100 C TYP 1.2 0.95 1.3 10 100 MAX. 1.3 1.08 1.45 50 350 UNIT V V V A A
March 2000
2
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
ELECTRICAL CHARACTERISTICS OF DAMPER
Tj = 25 C unless otherwise stated SYMBOL trr Qs Vfr PARAMETER Reverse recovery time Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 1 A; VR 30 V; -dIF/dt = 50 A/s 2 A,30 V,20 A/s IF = 6.5 A; dIF/dt = 50 A/s TYP. 130 0.65 29
BYM358DX
MAX. 170 0.9 -
UNIT ns C V
ELECTRICAL CHARACTERISTICS OF MODULATOR
Tj = 25 C unless otherwise stated SYMBOL trr Irrm Qs Vfr PARAMETER Reverse recovery time Peak reverse recovery current Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C 2 A,30 V,20 A/s IF = 10 A; dIF/dt = 10 A/s TYP. 35 3.0 40 5.0 MAX. 60 5.5 70 UNIT ns A nC V
March 2000
3
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
BYM358DX
I
dI F dt
I
F
F
t
rr time
time VF
Q I I
s
10%
100%
V VF time
fr
R
rrm
Fig.1. Definition of trr, Qs and Irrm Modulator
Fig.4. Definition of Vfr
I
dI F dt
F
1000
Qs / nC
10A
trr time
2A 100
10A IF=2A
10
Qs I I
25%
100%
25 C 150 C
R
rrm
1 1 -diF / dt 10 100
Fig.2. Definition of trr, Qs and Irrm Damper
Fig.5. Modulator maximum Qs at Tj = 25C and 150C
10
Irrm / A IF=10A
100
Cd / pF
1 IF=1A
10
0.1 Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
1 1 10 VR / V 100 1000
Fig.3. Modulator maximum Irrm at Tj = 100C
Fig.6. Modulator typical junction capacitance Cd at f = 1 MHz; Tj = 25C
March 2000
4
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
BYM358DX
10
Transient thermal impedance, Zth j-hs (K/W)
10
Transient thermal impedance, Zth j-mb (K/W)
1
1
0.1
0.1
0.01
P D
tp
D=
tp T t
0.01
P D
tp
D=
tp T t
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV29F
10s
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359
10s
Fig.7. Modulator transient thermal impedance Zth = f(tp)
Fig.10. Damper transient thermal impedance Zth = f(tp)
30
IF / A Tj=150 C Tj=25 C
BYW29
30
IF / A Tj=125C Tj=25C
BY359
20
20
typ 10
max
10 typ
max
0 0 0.5 1 VF / V 1.5 2
0 0 1.0 VF / V 2.0
Fig.8. Modulator typical and maximum forward characteristic; IF = f(VF); parameter Tj
Fig.11. Damper forward characteristic IF = f(VF); parameter Tj
1000
trr / ns
10A
100 1A Tj = 25 C Tj = 150 C
10 10 -diF/dt 100
Fig.9. Modulator maximum trr measured to 25% of Irrm; Tj = 25C and 150C
March 2000
5
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
MECHANICAL DATA
Dimensions in mm Net Mass: 5.88 g
BYM358DX
16.0 max 0.7 4.5 10.0 27 max 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 5.45 5.45 3.3
5.8 max 3.0
25
0.9 max 3.3
Fig.12. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
March 2000
6
Rev 1.000
Philips Semiconductors
Product specification
Damper-Modulator fast, high-voltage
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYM358DX
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 2000
7
Rev 1.000

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