View BGX50A_47658.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Silicon Switching Diode Array
q q
BGX 50 A
Bridge configuration High-speed switch diode chip
Type BGX 50 A
Marking U1s
Ordering Code (tape and reel) Q62702-G38
Pin Configuration
Package1) SOT-143
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Total power dissipation, TS = 74 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VR VRM IF Ptot Tj Tstg
Values 50 70 140 210 150 - 65 ... + 150
Unit V mA mW C
640 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BGX 50 A
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Forward voltage per diode IF = 100 mA Reverse current per diode VR = 50 V VR = 50 V, TA = 150 C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Test circuit for reverse recovery time CD trr - - - - 1.5 6 pF ns VF IR - - - - 0.2 100 - - 1.3 V
A
Values typ. max.
Unit
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Semiconductor Group
2
BGX 50 A
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 C
Peak forward current IFM = f (t) TA = 25 C
Semiconductor Group
3
BGX 50 A
Forward voltage VF = f (TA)
Semiconductor Group
4

▲Up To Search▲

Price & Availability of BGX50A

	To Download BGX50A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .