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| SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 3 - OCTOBER 1995 FEATURES * * Guaranteed hFE Specified up to 2A Fast Switching DEVICE TYPE IN FULL FZT604 - FZT704 FZT605 - FZT705 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg FZT604 120 100 10 4 1.5 2 C FZT604 FZT605 PARTMARKING DETAIL COMPLEMENTARY TYPES - E C B FZT605 140 120 UNIT V V V A A W C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range PARAMETER -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). SYMBOL MIN. MAX. UNIT CONDITIONS. V(BR)CBO V(BR)CEO V(BR)EBO ICBO 120 140 100 120 10 0.01 10 0.01 10 IEBO FZT604 FZT605 VCE(sat) VBE(sat) VBE(on) hFE ICES 0.1 10 10 1.0, 1.5 1.8 1.7 2K 5K 100K 2K 0.5K V V V V A A A A A A A Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-Off Current FZT604 FZT605 FZT604 FZT605 FZT604 FZT605 IC=100A IC=100A IC=10mA* IC=10mA* IE=100A VCB=100V VCB=100V,T amb =100C VCB=120V VCB=120V,T amb =100C VEB=8V VCES=100V VCES=120V IC=250mA, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-EmitterSaturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V V V V 3 - 202 FZT604 FZT605 PARAMETER Transition Frequency Input capacitance Output Capacitance Switching Times SYMBOL fT Cibo Cobo ton toff MIN. 150 90 Typical 15 Typical 0.5 Typical 1.6 Typical MAX. UNIT MHz pF pF pF pF CONDITIONS IC=100mA,VCE=10V f=20MHz VEB=500mV, f=1MHz VCB=10V, f=1MHz IC=500mA, VCE=10V IB1 = IB2 = 0.5mA * Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2% Spice parameter data is available upon request for these devices. 3 - 203 FZT604 FZT605 TYPICAL CHARACTERISTICS 1.8 1.6 - (Volts) 1.4 1.2 IC/IB=100 1.0 0.8 - Gain normalised to 1 Amp -55C +25C +100C +175C 2.5 -55C +25C +100C VCE=5V 2.0 1.5 V 0.6 0.4 0.2 0 1.0 0.5 h 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 2.2 2.0 1.8 1.6 -55C +25C +100C +175C 2.2 2.0 1.8 1.6 1.4 1.2 1.0 -55C +25C +100C - (Volts) 1.4 1.2 1.0 0.8 IC/IB=100 - (Volts) V VCE=5V 0.8 0.6 0.4 0.1 1 10 0.01 0.1 1 10 V 0.6 0.4 0.01 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 10 I+ -Collector Current (A) I+ -Collector Current (A) 1 1 0.1 DC 1s 100ms 10ms 1ms 100s 0.1 DC 1s 100ms 10ms 1ms 100s 0.01 1 10 100 1000 0.01 1 10 100 1000 VCE - Collector Emitter Voltage (V) VCE - Collector Emitter Voltage (V) FZT604 Safe Operating Area 3 - 204 FZT605 Safe Operating Area |
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