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BZM55B...
Vishay Telefunken
Silicon Epitaxial Planar Z-Diodes
Features
D D D D D D D D D D
Saving space Hermetic sealed parts Fits onto SOD 323 / SOT 23 footprints Electrical data identical with the devices BZT55B... / TZMB... Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances VZ-tolerance 2%
96 12315
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions RthJA
x300K/W
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 175 -65...+175
Unit mW mA C C
Maximum Thermal Resistance
Tj = 25_C Parameter Test Conditions Junction ambient mounted on epoxy-glass hard tissue, Fig. 1 Junction tie point 35mm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA RthJL Value 500 300 Unit K/W K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85597 Rev. 3, 01-Apr-99
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BZM55B...
Vishay Telefunken
Type BZM55B... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT and V 2.35 to 2.45 2.64 to 2.76 2.94 to 3.06 3.24 to 3.36 3.52 to 3.68 3.82 to 3.98 4.22 to 4.38 4.60 to 4.80 5.00 to 5.20 5.48 to 5.72 6.08 to 6.32 6.66 to 6.94 7.35 to 7.65 8.04 to 8.36 8.92 to 9.28 9.80 to 10.20 10.78 to 11.22 11.76 to 12.24 12.74 to 13.26 14.70 to 15.30 15.70 to 16.30 17.64 to 18.36 19.60 to 20.40 21.55 to 22.45 23.5 to 24.5 26.4 to 27.6 29.4 to 30.6 32.4 to 33.6 35.3 to 36.7 38.2 to 39.8 42.1 to 43.9 46.1 to 47.9 50.0 to 52.0 54.9 to 57.1 60.8 to 63.2 66.6 to 69.4 73.5 to 76.5 rzjT rzjk at IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR and IR at VR mA mA 2) V < 100 < 50 1 < 10 < 50 1 <4 < 40 1 <2 < 40 1 <2 < 40 1 <2 < 40 1 <1 < 20 1 < 0.5 < 10 1 < 0.1 <2 1 < 0.1 <2 1 < 0.1 <2 2 < 0.1 <2 3 < 0.1 <2 5 < 0.1 <2 6.2 < 0.1 <2 6.8 < 0.1 <2 7.5 < 0.1 <2 8.2 < 0.1 <2 9.1 < 0.1 <2 10 < 0.1 <2 11 < 0.1 <2 12 < 0.1 <2 13 < 0.1 <2 15 < 0.1 <2 16 < 0.1 <2 18 < 0.1 <2 20 < 0.1 <2 22 < 0.1 <2 24 < 0.1 <2 27 < 0.1 <5 30 < 0.1 <5 33 < 0.1 <5 36 < 0.1 < 10 39 < 0.1 < 10 43 < 0.1 < 10 47 < 0.1 < 10 51 < 0.1 < 10 56 TKVZ %/K -0.09 to -0.06 -0.09 to -0.06 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.06 to -0.03 -0.05 to +0.02 -0.02 to +0.02 -0.05 to +0.05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0,12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12
W
W
< 85 < 85 < 90 < 90 < 90 < 90 < 90 < 80 < 60 < 40 < 10 <8 <7 <7 < 10 < 15 < 20 < 20 < 26 < 30 < 40 < 50 < 55 < 55 < 80 < 80 < 80 < 80 < 80 < 90 < 90 < 110 < 125 < 135 < 150 < 200 < 250
< 600 < 600 < 600 < 600 < 600 < 600 < 600 < 600 < 550 < 450 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 220 < 220 < 220 < 220 < 500 < 600 < 700 < 700 < 1000 < 1000 < 1000 < 1500
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Document Number 85597 Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
200 C D - Diode Capacitance ( pF )
150 VR = 2V 100 Tj = 25C
50
0 40 80 120 160 200
95 9601
0
5
10
15
20
25
Tamb - Ambient Temperature ( C )
VZ - Z-Voltage ( V )
Total Power Dissipation vs. Ambient Temperature
1000 VZtn - Relative Voltage Change - Voltage Change ( mV ) 1.3
Diode Capacitance vs. Z-Voltage
VZtn=VZt/VZ(25C) 1.2
TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K
Tj = 25C 100
1.1
4 2
IZ=5mA 10
1.0 0.9 0.8 -60
0 -2 10-4/K -4 10-4/K
DVZ
1 0
95 9598
5
10
15
20
25
95 9599
0
60
120
180
240
VZ - Z-Voltage ( V )
Tj - Junction Temperature ( C )
Typical Change of Working Voltage under Operating Conditions at Tamb=25C
TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 15 IF - Forward Current ( mA )
Typical Change of Working Voltage vs. Junction Temperature
100
10
10 Tj = 25C 1
5 IZ=5mA 0
0.1 0.01 0.001
-5 0 10 20 30 40 50 VZ - Z-Voltage ( V )
0
95 9605
0.2
0.4
0.6
0.8
1.0
95 9600
VF - Forward Voltage ( V )
Temperature Coefficient of Vz vs. Z-Voltage
Forward Current vs. Forward Voltage
Document Number 85597 Rev. 3, 01-Apr-99
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BZM55B...
Vishay Telefunken
100 r Z - Differential Z-Resistance ( W ) 1000
IZ - Z-Current ( mA )
80 Ptot=500mW Tamb=25C 60
IZ=1mA 100
5mA 10 10mA
40 20 0 0 4 8 12 16 20
1 0
95 9606
Tj = 25C 5 10 15 20 25
95 9604
VZ - Z-Voltage ( V )
VZ - Z-Voltage ( V )
Z-Current vs. Z-Voltage
50 Ptot=500mW Tamb=25C
Differential Z-Resistance vs. Z-Voltage
IZ - Z-Current ( mA )
40
30
20 10 0 15 20 25 30 35
95 9607
VZ - Z-Voltage ( V )
Z-Current vs. Z-Voltage
Z thp - Thermal Resistance for Pulse Cond. (K/W)
1000
tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzj tp/T=0.01
DT=Tjmax-Tamb
RthJA=300K/W
DT/Zthp)1/2)/(2rzj)
100
101 tp - Pulse Length ( ms )
102
95 9603
Thermal Response
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Document Number 85597 Rev. 3, 01-Apr-99
BZM55B...
Vishay Telefunken
0.71 1.3 1.27
95 10331
Wave Soldering
0.152
1.4
9.9 25 0.355 0.7 1.4 2.8 10 0.7
Recommended foot pads (in mm)
2.5 24
95 10329
Board for RthJA definition (in mm)
Reflow Soldering
95 10330
1.2
0.6
1.2 2.4
0.6
Recommended foot pads (in mm)
Dimensions in mm
96 12072
Document Number 85597 Rev. 3, 01-Apr-99
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BZM55B...
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85597 Rev. 3, 01-Apr-99

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