View APT50GF60HR_42300.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT50GF60HR
600V 55A
Fast IGBT
The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage.
TO-258
* Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package
MAXIMUM RATINGS
Symbol VCES V CGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage
* High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated
C E G
C G E
All Ratings: TC = 25C unless otherwise specified.
APT50GF60HR UNIT
Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage
Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current
1
RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation
2
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Y R A IN IM L E R P
600 600 20 55 50
@ TC = 25C
Volts
110 100 75
Amps
mJ Watts C
180
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT
600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0
6-2000 050-5976 Rev -
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V)
I CES I GES
mA nA
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA EUROPE
405 S.W. Columbia Street Chemin de Magret
Bend, Oregon 97702-1035 F-33700 Merignac - France
Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT50GF60HR
Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT
2600 280 165 170 25 100 20 100 100 110 30 90
ns nC pF
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time
Turn-off Delay Time Fall Time
Y R A IN IM L E R P
Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
280 170 2.2 2.4 4.6 30 90
TJ = +150C
mJ
Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W
ns
250 100 4.1
Total Switching Losses Forward Transconductance
TJ = +25C VCE = 20V, I C = I C2
mJ S
6
THERMAL CHARACTERISTICS
Symbol RQJC RQJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W
0.70 40
1 2
6-2000
Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 60H, Tj = 25C See MIL-STD-750 Method 3471 The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
3 4
050-5976
Rev -

▲Up To Search▲

Price & Availability of APT50GF60HR

	To Download APT50GF60HR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .