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| Phototransistors PNZ150L Silicon NPN Phototransistor Unit : mm o3.50.2 4.80.3 2.4 2.4 Not soldered For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current Small size, thin side-view type package 4.50.3 4.20.3 2.3 1.9 42.71.0 2.2 14.5 2.95 1.0 2-1.12 2-0.450.15 0.40.15 1.2 2-0.60.15 2-0.450.15 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25C) Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 100 -25 to +85 -30 to +100 Unit V mA mW C C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25C) Parameter Dark current Sensitivity to infrared emitters Collector saturation voltage Peak sensitivity wavelength Response time Acceptance half angle *1 *2 Symbol ICEO SIR*1 VCE(sat) P tr, tf*2 VCEO = 10V Conditions VCE = 10V, H = 15W/cm2 VCE = 10V, H = 15W/cm2 VCEO = 10V VCC = 10V, ICE(L) = 5mA, RL = 100 Measured from the optical axis to the half power point min 16 typ 0.01 0.2 800 4 35 max 0.2 0.5 Unit A A V nm s deg. Measurements were made using infrared light ( = 940 nm) as a light source. Response time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) ,,, , ,, 50 RL 1 Phototransistors PNZ150L PC -- Ta 120 20 ICE(L) -- VCE Ta = 25C T = 2856K 10 2 ICE(L) -- L ICE(L) (mA) VCE = 10V Ta = 25C T = 2856K PC (mW) 100 ICE(L) (mA) 16 L = 2000 lx 1750 lx 1500 lx 1250 lx 1000 lx 8 750 lx 4 500 lx 250 lx 0 100 lx 0 4 8 12 16 20 24 10 Collector power dissipation 80 Collector photo current 60 Collector photo current 12 1 10 -1 40 20 10 -2 0 - 20 0 20 40 60 80 100 10 -3 1 10 10 2 10 3 10 4 Ambient temperature Ta (C ) Collector to emitter voltage VCE (V) Illuminance L (lx) ICE(L) -- Ta 10 2 VCE = 10V T = 2856K 10 ICEO -- Ta VCE = 10V 100 Spectral sensitivity characteristics VCE = 10V Ta = 25C ICE(L) (mA) ICEO (A) 1 S (%) Relative sensitivity 0 40 80 120 80 Collector photo current 60 L = 1000 lx 10 500 lx Dark current 10 -1 40 10 -2 20 1 - 40 0 40 80 120 10 -3 - 40 0 200 400 600 800 1000 1200 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Wavelength (nm) Directivity characteristics 0 100 10 20 10 4 tr -- ICE(L) VCC = 10V Ta = 25C 10 4 tf -- ICE(L) VCC = 10V Ta = 25C 80 70 60 50 40 30 20 Relative sensitivity S (%) 90 30 10 3 10 3 tr (s) 40 50 60 70 80 90 10 2 RL = 1k 10 500 100 1 tf (s) Fall time 10 2 RL = 1k 10 500 100 1 Rise time 10 -1 10 -2 10 -1 1 10 10 2 10 -1 10 -2 10 -1 1 10 10 2 Collector photo current ICE(L) (mA) Collector photo current ICE(L) (mA) 2 |
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