View MIC94030_32075.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MIC94030/94031
Micrel
MIC94030/94031
TinyFETTM P-Channel MOSFET Preliminary Information
General Description
The MIC94030 and MIC94031 are 4-terminal silicon gate P-channel MOSFETs that provide low on-resistance in a very small package. Designed for high-side switch applications where space is critical, the MIC94030/1 exhibits an on-resistance of typically 0.75 at 4.5V gate-to-source voltage. The MIC94030/1 also operates with only 2.7V gate-to-source voltage. The MIC94030 is the basic 4-lead P-channel MOSFET. The MIC94031 is a variation that includes an internal gate pull-up resistor that can reduce the system parts count in many applications. The 4-terminal SOT-143 package permits a substrate connection separate from the source connection. This 4-terminal configuration improves the JA (improved heat dissipation) and makes analog switch applications practical. The small size, low threshold, and low RDS(on) make the MIC94030/1 the ideal choice for PCMCIA card sleep mode or distributed power management applications.
Features
* 13.5V minimum drain-to-source breakdown * 0.75 typical on-resistance at 4.5V gate-to-source voltage * 0.45 typical on-resistance at 10V gate-to-source voltage * Operates with 2.7V gate-to-source voltage * Separate substrate connection for added control * Industry's smallest surface mount package
Applications
* * * * * Distributed power management PCMCIA card power management Battery-powered computers, peripherals Hand-held bar-code scanners Portable communications equipment
Ordering Information
Part Number MIC94030BM4 MIC94031BM4 Temperature Range* -55C to +150C -55C to +150C Package SOT-143 SOT-143
* Operating Junction Temperature
Pin Configuration
Typical PCB Layout
D
6
PCB heat sink plane improves heat dissipation
SS
Drain
Substrate
Part Identification
Part Number
Identification P30 P31
P3x
Gate Source
MIC94030BM4 MIC94031BM4
SOT-143 Package (M4)
G
S PCB traces
Schematic Symbol
Functional Diagrams
S
S
Source Gate Substrate Drain
D G SS
~500k G Internal gate-to-source pull-up resistor SS D
Schematic Symbol
Patents 5,355,008; 5,589,702
MIC94030
MIC94031
1997
6-41
MIC94030/94031
Micrel
Absolute Maximum Ratings
Voltage and current values are negative. Signs not shown for clarity.
Drain-to-Source Voltage (pulse) .................................... 16V Gate-to-Source Voltage (pulse) .................................... 16V Continuous Drain Current TA = 25C .................................................................... 1A TA = 100C ............................................................... 0.5A Operating Junction Temperature ............... -55C to +150 Storage Temperature ............................... -55C to +150C
Total Power Dissipation TA = 25C ............................................................ 568mW TA = 100C .......................................................... 227mW Thermal Resistance JA ...................................................................................... 220C/W JC ..................................................................................... 130C/W Lead Temperature 1/16" from case, 10s ........................................... +300C
Electrical Characteristics Voltage and current values are negative.
Symbol VBDSS VGS IGSS RGS CISS IDSS ID(ON) RDS(ON) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Gate-Source Resistor Input Capacitance Zero Gate Voltage Drain Current Condition (Note 1) VGS = 0V, ID = 250A VDS = VGS, ID = 250A
Signs not shown for clarity.
Min 13.5 0.6 1.0 1.4 1 500 750 100 25 0.010 6.3 0.45 0.75 1.20 480 1.00 250 1000 Typ Max Units V V A k pF A A A mS
VDS = 0V, VGS = 12V, Note 2, Note 3 VDS = 0V, VGS = 12V, Note 2, Note 4 VGS = 0V, VDS = 12V VDS = 12V, VGS = 0V VDS = 12V, VGS = 0V, TJ = 125C VDS = 10V, VGS = 10V, Note 5 VGS = 10V, ID = 100mA VGS = 4.5V, ID = 100mA VGS = 2.7V, ID = 100mA VDS = 10V, ID = 200mA, Note 5
On-State Drain Current Drain-Source On-State Resist.
gFS Note 1 Note 2 Note 3 Note 4 Note 5
Forward Transconductance
TA = 25C unless noted. Substrate connected to source for all conditions ESD gate protection diode conducts during positive gate-to-source voltage excursions. MIC94030 only MIC94031 only Pulse Test: Pulse Width 80sec, Duty Cycle 0.5%
6-42
1997
MIC94030/94031
Micrel
Typical Characteristics
On Resistance vs. Drain Current at 25C
1.50
80s Pulse Test
On Resistance vs. Drain Current at 125C
1.50
80s Pulse Test
1.25
RDS(ON) ()
1.25 RDS(ON) () 1.00 0.75 0.50 0.25 2.0 0.00 0.0 0.5 1.0 ID (A) 1.5 2.0 VG = 10V VG = 4.5V
1.00 0.75 0.50 0.25 0.00 0.0 0.5 VG = 10V VG = 4.5V
1.0 ID (A)
1.5
Drain Characteristics
160 2.0V 1.8V 3.5 VGS
Drain Characteristics
5.0V 6 4.5V 4.0V 3.5V 2.5V 2.0V 1.5V 1.0V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 VGS
Drain Characteristics
10V 5 9V 8V 4 3 4V 2 1 0 3V 2V 1V VGS 6V 5V
DRAIN CURRENT (mA)
140 120 100 80 60 40 20 1.6V
DRAIN CURRENT (A)
1.4V 1.2V
0 0.0 0.5 1.0 1.5 2.0 DRAIN-TO-SOURCE VOLTAGE (V)
0 2 4 6 8 10 12 14 DRAIN-TO-SOURCE VOLTAGE (V)
300s Pulse Test
DRAIN CURRENT (A)
0 2 4 6 8 10 12 14 DRAIN-TO-SOURCE VOLTAGE (V)
80s Pulse Test
6
1997
6-43
MIC94030/94031
Micrel
Typical Applications
SS* +5V MIC94030
On Off
S
D
Load
G
74HC04 * Substrate must be connected to source
Figure 1. Power Switch Application
+12V
Open Drain Output
Internal Resistor
G
S SS* D
Load
MIC94031
* Substrate must be connected to source
Figure 2. Power Control Application
SS* +12V MIC94030 A
On Off
S
D
Load
G
74C04
A Off On Off On
B Output Off 0V Off +12V On +8V On don't!
2M SS* +8V +12V B
On Off
S MIC94030
D G
* Substrate must be connected to source
Use "C" version only. "HC" versions not rated to 12V.
74C04
Figure 3. Analog Switch Application
6-44
1997

▲Up To Search▲

Price & Availability of MIC94030

	To Download MIC94030 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .