 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SEMICONDUCTOR HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) January 1997 Features * 14A, 600V at TC = 25oC * * * * * 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTP7N60C3D, HGT1S7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors PACKAGING AVAILABILITY PART NUMBER HGTP7N60C3D HGT1S7N60C3D HGT1S7N60C3DS PACKAGE TO-220AB TO-262AA TO-263AB BRAND G7N60C3D G7N60C3D G7N60C3D JEDEC TO-262AA COLLECTOR (FLANGE) A EMITTER COLLECTOR GATE JEDEC TO-263AB M A A COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. HGT1S7N60C3DS9A. Formerly Developmental Type TA49121. G E Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . .tSC NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 50. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS 600 14 7 8 56 20 30 40A at 480V 60 0.487 -40 to 150 260 1 8 UNITS V A A A A V V W W/oC oC oC s s (c) Harris Corporation 1997 File Number 4150.1 3-22 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Electrical Specifications PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V IC = 250A, VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES VGE = 15V VGE = 20V IEC = 7A IEC = 7A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance RJC IGBT Diode 8 23 30 8.5 11.5 350 140 165 600 1.9 25 18 30 38 400 275 2.5 35 30 2.1 2.0 V nC nC ns ns ns ns J J V ns ns oC/W oC/W MIN 600 3.0 TYP 1.6 1.9 5.0 MAX 250 2.0 2.0 2.4 6.0 250 - UNITS V A mA V V V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC Gate-Emitter Threshold Voltage VGE(TH) IGES SSOA Gate-Emitter Leakage Current Switching SOA VCE(PK) = 480V VCE(PK) = 600V 40 6 - nA A A Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time tD(ON)I tRI tD(OFF)I tFI EON EOFF VEC trr TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 50 L = 1mH NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP7N60C3D, HGT1S7N60C3D, and HGT1S7N60C3DS were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 3-23 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 35 30 25 20 15 10 5 0 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) TC = 150oC TC = 25oC TC = -40oC 40 DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250s PULSE DURATION = 250s, DUTY CYCLE <0.5%, 35 TC = 25oC 30 25 VGE = 15.0V 20 15 8.5V 10 8.0V 5 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 7.5V 7.0V 10 9.0V 12.0V 10.0V FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR-EMITTER CURRENT (A) 35 30 25 20 15 10 5 0 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 10V ICE, COLLECTOR-EMITTER CURRENT (A) 40 40 35 30 25 20 15 10 5 0 PULSE DURATION = 250s DUTY CYCLE <0.5%, VGE = 15V TC = -40oC TC = 25oC TC = -40oC TC = 150oC TC = 150oC TC = 25oC 1 2 3 4 5 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE ICE , DC COLLECTOR CURRENT (A) VGE = 15V VCE = 360V, RGE = 50, TJ = 125oC 12 10 ISC 8 120 9 100 6 6 80 3 4 tSC 2 10 13 11 12 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 60 0 25 50 75 100 125 150 40 15 TC , CASE TEMPERATURE (oC) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-24 ISC, PEAK SHORT CIRCUIT CURRENT (A) 15 tSC , SHORT CIRCUIT WITHSTAND TIME (S) 12 140 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves 50 tD(ON)I , TURN-ON DELAY TIME (ns) 40 30 (Continued) 500 tD(OFF)I , TURN-OFF DELAY TIME (ns) 450 400 350 VGE = 10V or 15V 300 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 20 VGE = 10V VGE = 15V 10 250 5 2 5 8 11 14 17 20 ICE , COLLECTOR-EMITTER CURRENT (A) 200 2 8 11 14 17 5 ICE , COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 200 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V VGE = 10V tFI , FALL TIME (ns) 300 250 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V tRI , TURN-ON RISE TIME (ns) 100 200 VGE = 10V or 15V 150 VGE = 15V 10 5 2 17 5 14 8 11 ICE , COLLECTOR-EMITTER CURRENT (A) 20 100 2 5 8 11 14 17 20 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 2000 EON , TURN-ON ENERGY LOSS (J) 1000 VGE = 10V EOFF , TURN-OFF ENERGY LOSS (J) TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 3000 TJ = 150oC, RG = 50, L = 1mH, VCE(PK) = 480V 500 VGE = 15V 1000 500 VGE = 10V or 15V 100 40 2 5 17 14 8 11 ICE , COLLECTOR-EMITTER CURRENT (A) 20 100 2 17 8 11 5 14 ICE , COLLECTOR-EMITTER CURRENT (A) 20 FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-25 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves 200 fMAX , OPERATING FREQUENCY (kHz) 100 (Continued) 50 ICE, COLLECTOR-EMITTER CURRENT (A) TJ = 150oC, TC = 75oC RG = 50, L = 1mH TJ = 150oC, VGE = 15V, RG = 50, L = 1mH 40 VGE = 10V VGE = 15V 30 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W 1 2 10 ICE, COLLECTOR-EMITTER CURRENT (A) 20 30 20 10 0 0 100 200 300 400 500 600 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz CIES VCE , COLLECTOR - EMITTER VOLTAGE (V) 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 CRES 0 0 5 10 15 600 500 400 300 200 100 0 0 IG REF = 1.044mA, RL = 50, TC = 25oC 15 12.5 10 7.5 5 2.5 0 30 VGE, GATE-EMITTER VOLTAGE (V) VCE = 200V VCE = 400V VCE = 600V COES 20 25 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE FIGURE 16. GATE CHARGE WAVEFORMS ZJC , NORMALIZED THERMAL RESPONSE 100 0.5 t1 PD 10-1 0.1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 t2 0.2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-26 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Typical Performance Curves 30 30 IEC , FORWARD CURRENT (A) 25 20 15 10 tB 5 0 0.5 trr TC = 25oC, dIEC/dt = 200A/s (Continued) 10 tR , RECOVERY TIMES (ns) tA 175oC 1.0 100oC 25oC 0.5 0 0.5 1.0 1.5 2.0 VEC , FORWARD VOLTAGE (V) 2.5 3.0 1 3 7 IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD CURRENT Test Circuit and Waveform L = 1mH RHRD660 VGE 90% 10% EOFF EON RG = 50 + VCE 90% VDD = 480V ICE 10% tD(OFF)I tFI tRI tD(ON)I - FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS 3-27 HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS Operating Frequency Information Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBDTM LD26 or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. ECCOSORBDTM LD26 is a Trademark of Emerson and Cumming, Inc. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries. Sales Office Headquarters For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS NORTH AMERICA Harris Semiconductor P. O. Box 883, Mail Stop 53-210 Melbourne, FL 32902 TEL: 1-800-442-7747 (407) 729-4984 FAX: (407) 729-5321 EUROPE Harris Semiconductor Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Harris Semiconductor PTE Ltd. No. 1 Tannery Road Cencon 1, #09-01 Singapore 1334 TEL: (65) 748-4200 FAX: (65) 748-0400 SEMICONDUCTOR 3-28 |
Price & Availability of HGT1S7N60C3D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |