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| ADVANCE INFORMATION ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package APPLICATIONS * Motor Drive * LCD backlighting Q1 = N-channel Q2 = P-channel ORDERING INFORMATION DEVICE ZXMC3A18DN8TA ZXMC3A18DN8TC REEL SIZE 7" 13" TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units DEVICE MARKING * ZXMC 3A18 Top View DRAFT ISSUE C - JUNE 2003 1 SEMICONDUCTORS ZXMC3A18DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V GS = 10V; T A =25C) (b)(d) (V GS = 10V; T A =70C) (b)(d) (V GS = 10V; T A =25C) (a)(d) Pulsed Drain Current Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation at T A =25C (a) (d) Linear Derating Factor Power Dissipation at T A =25C (a) (e) Linear Derating Factor Power Dissipation at T A =25C (b) (d) Linear Derating Factor Operating and Storage Temperature Range T j , T stg PD (c) ADVANCE INFORMATION SYMBOL V DSS V GS ID LIMIT 30 20 7.6 6.1 5.8 37 3.6 37 1.25 10 PD 1.8 14 2.1 17 -55 to +150 UNIT -30 20 -6.3 -5.0 -4.8 -30 tbd 30 V V A A A A A A W mW/C W mW/C W mW/C C I DM IS I SM PD THERMAL RESISTANCE PARAMETER Junction to Ambient (a) (d) Junction to Ambient (a) (e) Junction to Ambient (b) (d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300 s, d = 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 2 ADVANCE INFORMATION CHARACTERISTICS ZXMC3A18DN8 DRAFT ISSUE C - JUNE 2003 3 SEMICONDUCTORS ZXMC3A18DN8 N-Channel ADVANCE INFORMATION ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) (1) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr 30 0.5 100 1.0 0.025 0.030 17.5 V A I D = 250 A, V GS =0V V DS =30V, V GS =0V nA V V GS =20V, V DS =0V I D = 250 A, V DS =V GS V GS = 10V, I D = 5.8A V GS = 4.5V, I D = 5.3A S V DS = 15V, I D = 5.8A 1800 289 178 pF pF pF V DS = 25V, V GS =0V f=1MHz 5.5 8.7 33 8.5 19.4 36 5.5 ns ns ns ns nC nC nC nC V DD = 15V, I D =6A R G 6.0 , V GS = 10V V DS = 15V, V GS = 5V I D = 3.5A V DS = 15V, V GS = 10V I D = 3.5A 7.0 0.95 20.5 41.5 V ns nC T j =25C, I S = 6A, V GS =0V T j =25C, I F = 6A, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300ms; Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 4 ADVANCE INFORMATION TYPICAL CHARACTERISTICS ZXMC3A18DN8 DRAFT ISSUE C - JUNE 2003 5 SEMICONDUCTORS ZXMC3A18DN8 ADVANCE INFORMATION TYPICAL CHARACTERISTICS DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 6 ADVANCE INFORMATION P-Channel ZXMC3A18DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) (1) (3) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs C iss C oss C rss t d(on) tr t d(off) tf Qg Qg Q gs Q gd V SD t rr Q rr -30 -1.0 100 -1.0 0.035 0.050 tbd V A I D = -250 A, V GS =0V V DS =-30V, V GS =0V nA V V GS =20V, V DS =0V I D = 250 A, V DS =V GS V GS = -10V, I D = -4.8A V GS = -4.5V, I D = -4.0A S V DS = -15V, I D = -4.8A 1630 320 210 pF pF pF V DS = -15V, V GS =0V f=1MHz 9.2 18 96 60 tbd 41 5.2 ns ns ns ns nC nC nC nC V DD = -15V, I D =-1A R G 6.0 , V GS = 10V V DS = -15V, V GS = -5V I D = -5.0A V DS = -15V, V GS = -10V I D = -5.0A 7.3 -0.95 tbd tbd V ns nC T j =25C, I S = -tbd, V GS =0V T j =25C, I F = -tbd, di/dt=100A/ s NOTES (1) Measured under pulsed conditions. Pulse width 300ms; Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE C - JUNE 2003 7 SEMICONDUCTORS ZXMC3A18DN8 PACKAGE OUTLINE D ADVANCE INFORMATION E H Pin 1 c A Seating Plane b e Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimetres Inches (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS A1 8 L |
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