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| NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ZTX652 ZTX653 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C derate above 25C SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg ZTX653 MAX. MIN. TYP. 120 100 5 0.1 10 IEBO 0.13 0.23 0.9 0.8 0.1 0.3 0.5 1.25 1 0.13 0.23 0.9 0.8 MAX. ZTX652 100 80 5 6 2 1 5.7 E-Line TO92 Compatible ZTX653 120 100 UNIT V V V A A W mW/C C Operating and Storage Temperature Range ZTX652 MIN. TYP. 100 80 5 -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO UNIT CONDITIONS. V V V A A A A A IC=100A IC=10mA* IE=100A VCB=80V VCB=100V VCB=80V,Tamb=100C VCB=100V,Tamb=100C VEB=4V IC=1A, IB=100mA* IC=2A, IB=200mA* IC=1A, IB=100mA* IC=1A, VCE=2V* 0.1 10 0.1 0.3 0.5 1.25 1 Collector-Emitter VCE(sat) Saturation Voltage Base-Emitter VBE(sat) Saturation Voltage Base-Emitter Turn-On Voltage VBE(on) V V V V 3-222 ZTX652 ZTX653 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL ZTX652 MIN. TYP. Transition Frequency Switching Times fT ton toff Output Capacitance Cobo 140 175 80 1200 30 ZTX653 MAX. MIN. TYP. 140 175 80 1200 30 MAX. MHz ns ns pF IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA VCB=10V f=1MHz UNIT CONDITIONS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-223 ZTX652 ZTX653 TYPICAL CHARACTERISTICS 0.6 0.5 225 VCE(sat) - (Volts) 0.4 0.3 0.2 0.1 0 IC/IB=10 hFE - Gain 175 VCE=2V 125 75 0.0001 0.001 0.01 0.1 1 10 25 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC hFE v IC 1.4 1.2 VBE(sat) - (Volts) 1.2 1.0 VBE - (Volts) 1.0 VCE=2V 0.8 IC/IB=10 0.8 0.6 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 IC - Collector Current (Amps) IC - Collector Current (Amps) VBE(sat) v IC 10 Single Pulse Test at Tamb=25C td tr tf ns 280 VBE(on) v IC IC - Collector Current (Amps) IB1=IB2=IC/10 ts ns 2800 2400 2000 1600 1200 800 400 0 0.01 tf td tr ts 1 240 Switching time ZTX652 ZTX653 200 160 120 80 40 0 0.1 D.C. 1s 100ms 10ms 1.0ms 100s 0.1 1 0.01 0.1 1 10 100 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Safe Operating Area Switching Speeds 3-224 |
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