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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA573T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The PA573T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 -0 0.15 +0.1 -0.05 FEATURES * Two source common MOS FET circuits in package the same size as SC-70 * Directly driven by ICs having a 3 V power supply * Automatic mounting supported 0.7 0.65 1.3 2.0 0.2 0.65 0.9 0.1 1.25 0.1 2.1 0.1 0 to 0.1 EQUIVALENT CIRCUIT 5 4 PIN CONNECTION 1. Gate 1 (G1) G 2. Source (common) 3. Gate 2 (G2) 4. Drain 2 (D2) 5. Drain 1 (D1) Marking: CB 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Operating Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Topt Tstg PW 10 ms, Duty Cycle 50 % VGS = 0 VDS = 0 TEST CONDITIONS RATINGS -30 +7 +100 +200 200 (Total) 150 -55 to +80 -55 to +150 UNIT V V mA mA mW C C C Document No. G11245EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 1996 PA573T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = - 5 V, ID = -10 mA, VGS(on) = -5 V, RG = 10 , RL = 500 TEST CONDITIONS VDS = -30 V, VGS = 0 VGS = +5 V, VDS = 0 VDS = -3 V, ID = -10 A VDS = -3 V, ID = -10 mA VGS = -2.5 V, ID = -1 mA VGS = -4.0 V, ID = -10 mA VDS = -5.0 V, VGS = 0, f = 1 MHz -1.6 20 -1.9 30 55 20 16 13 2 10 40 130 80 100 25 MIN. TYP. MAX. -1.0 +3.0 -2.3 UNIT A A V S pF pF pF ns ns ns ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS VGS DUT RL Gate voltage waveform ID td(on) Drain current waveform 0 tr td(off) tf 10 % VGS(on) 90 % VDD RG PG. 10 % ID 10 % 0 VGS = 1 s Duty Cycle 1 % 90 % 90 % 2 PA573T TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 250 100 dT - Derating Factor - % 80 60 40 20 PT - Total Power Dissipation - mW Total power dissipation 200 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 l ta To 100 50 0 20 40 60 80 100 120 140 160 TC - Case Temperature - C 0 30 60 90 120 150 TA - Ambient Temperature - C 180 TRANSFER CHARACTERISTICS -100 VDS = -3 V Pulsed measurement -2.6 VGS(off) - Gate Cut-off Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -3 V ID = -10 A -10 ID - Drain Current - mA -2.2 -1 TA = 150 C 75 C 25 C -25 C -1.8 -0.1 -1.4 -0.01 -1.0 -0.001 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 VGS - Gate to Source Voltage - V -4.0 -50 0 50 100 Tch - Channel Temperature - C 150 RDS(on) - Drain to Source On-State Resistance - FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS VDS = -3 V 200 Pulsed measurement 100 TA = -25 C 50 20 10 5 2 1 -0.5 -1 -2 -5 -10 -20 -50 -100 -200 ID - Drain Current - mA 25 C 75 C 150 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed measurement 30 -10 mA 20 ID = -100 mA 10 -2 -3 -4 -5 -6 -7 VGS - Gate to Source Voltage - V -8 3 PA573T DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = -2.5 V Pulsed measurement 75 C TA = -25 C 60 25 C 150 C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = -4 V Pulsed measurement RDS(on) - Drain to Source On-State Resistance - 80 RDS(on) - Drain to Source On-State Resistance - 80 60 -25 C 25 C 75 C 40 40 TA = 150 C 20 20 0 -0.3 -0.5 -1 -2 ID - Drain Current - mA -5 -10 0 -1 -2 -5 -10 -20 ID - Drain Current - mA -60 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 40 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS 300 VDD = -5 V VGS = -5 V Rin = 10 100 20 10 VDS = -5 V f = 1 MHz Ciss Coss tr 5 50 tf td(on) 2 Crss 1 0.5 -0.3 td(off) 10 -10 -1 -3 -10 VDS - Drain to Source Voltage - V -30 -20 -50 -100 ID - Drain Current - mA -300 SOURCE TO DRAIN DIODE FORWARD VOLTAGE -200 ISD - Source to Drain Current - mA DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -100 -4.5 V -80 -4.0 V -100 -30 -10 -3 -1 -0.3 VGS = 0 V Pulsed measurement ID - Drain Current - mA -60 -3.5 V -40 -3.0 V -20 VGS = -2.5 V 0 -1 -2 -3 -4 VDS - Drain to Source Voltage - V -5 -0.1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 VSD - Source to Drain Voltage - V 4 PA573T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 PA573T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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