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DATA SHEET
Compound Field Effect Power Transistor
PA1520B
N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
DESCRIPTION
The PA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver.
26.8 MAX.
10
PACKAGE DIMENSIONS
in millimeters
4.0
FEATURES
* 4 V driving is possible * Large Current and Low On-state Resistance ID (DC) = 2.0 A RDS (on) 1 0.17 MAX. (VGS = 10 V, ID = 1 A) RDS (on) 1 0.25 MAX. (VGS = 4 V, ID = 1 A) * Low Input Capacitance Ciss = 220 pF TYP.
2.54 1.4 0.60.1
1.4 0.50.1
ORDERING INFORMATION
Type Number Package 10 Pin SIP
3
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
5 7 9
PA1520BH
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. VGS = 0 3. PW 10 s, Duty Cycle 1 % 3. 4 circuits, TA = 25 C VDSSNote 1 VGSSNote 2 ID(DC) ID(pulse)Note 3 PT1Note 4 PT2Note 5 TCH Tstg 30 20 2.0 8.0 28 3.5 150 -55 to +150 V V A/unit A/unit W W C C
2 1
4
6
8 10
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate 3, 5, 7, 9 : Drain 1, 10 : Source
2. VDS = 0 4. 4 circuits, TC = 25 C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Document No. G10598EJ2V0DS00 (2nd edition) Date Published December 1995 P Printed in Japan
(c)
10 MIN.
2.5
1995
PA1520B
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Drain Leakage Current Gate Leakage Current Gate Cutoff Voltage Forward Transfer Admittance Drain to Source On-State Resistance SYMBOL IDSS IGSS VGS(off) | Yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tr QG QGS QGD VF(S-D) trr Qrr IF = 2.0 A, VGS = 0 IF = 2.0 A, VGS = 0, di/dt = 50 A/s VGS = 10 V, ID = 2.0 A, VDD = 24 V . ID = 1.0 A, VGS = 10 V, VDD = 15 V, . RL = 15 TEST CONDITIONS VDS = 30 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 1.0 A VGS = 10 V, ID = 1.0 A VGS = 4.0 V, ID = 1.0 A VDS = 10 V, VGS = 0, f = 1.0 MHz 1.0 1.0 0.10 0.13 220 220 90 27 125 590 500 14 2 5.5 1.0 640 3.4 0.17 0.25 MIN. TYP. MAX. 10 10 2.0 UNIT
A A
V S pF pF pF ns ns ns ns nC nC nC V ns
C
Test Circuit 1
Switching Time
D.U.T. RL VGS VGS
Wave Form
PG.
RG RG = 10
0 ID
10 %
VGS (on)
90 %
VDD 90 % 90 % ID ID
Wave Form
VGS 0 t t = 1 s Duty Cycle 1 % 0
10 % td (on) ton tr td (off) toff
10 % tf
Test Circuit 2
Gate Charge
D.U.T. IG = 2 mA RL
PG.
50
VDD
2
PA1520B
CHARACTERISTICS (TA = 25 C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 PT - Total Power Dissipation - W
PA1520BH
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 30 PT - Total Power Dissipation - W Under same dissipation in each circuit 4 Circuits operation 20 3 Circuits operation 2 Circuits operation 1 Circuit operation 10
NEC
,, ,, ,,
4 3 2 1 0
5
Laed Print Circuit Boad
Under same dissipation in each circuit 4 Circuits operation 3 Circuits operation 2 Circuits operation 1 Circuit operation
50
100
150
TC is grease Temperature on back surface 0 50 100 TC - Case Temperature - C
150
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % 100 80 60 40 20
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
ID - Drain Current - A
10
n)
RD
S(o
Lim
ite
G d (V
S=
10
V)
ID(Pulse)
50 m
PW = 1 m s
10 m
ID(DC)
s
10 0
s
1
DC
m s
0.1 0.1
TC = 25 C Single Pulse 1 10 100
0
20
40
60
80
100
120 140 160
VDS - Drain to Source Voltage - V
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 10 VGS = 20 V 10 V VGS = 4 V 6 Pulsed
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed VDS = 10 V ID - Drain Current - A 6
8 ID - Drain Current - A 10
1.0
TA = 125 C 75 C 25 C -25 C
4
0.1
2
0
2
4
0
0.5
1.0
1.5
2.0
VGS- Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
3
PA1520B
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1 000 Single Pulse. For each Circuit
Rth(CH-A) 4Circuits 3Circuits 2Circuits 1Circuit
rth(t) - Transient Thermal Resistance - C/W
100
Rth(CH-C)
10
1.0
0.1 100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - sec
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT yfs - Forward Transfer Admittance - S 100 VDS = 10 V Pulsed TA = -25 C 25 C 75 C 125 C
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 Pulsed
10
200
ID = 0.4 A 1A 2A
1.0
100
0.1 0.1
1.0 ID- Drain Current - A
10
0
10 VGS - Gate to Source Voltage - V
20
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 300 Pulsed 2
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA
200
VGS = 4 V
1
100
VGS = 10 V
0
1.0 ID - Drain Current - A
10
0 - 50
0
50
100
150
TCH - Channel Temperature - C
4
PA1520B
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 VGS = 4 V 150 VGS =10 V 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
10
VGS = 10 V 1.0 VGS = 0 0.1
50 ID = 1 A 0 50 100 150 TCH - Channel Temperature - C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000
0 - 50
0.01
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS 1 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
Coss Ciss Crss 100
VGS = 0 f = 1 MHz
td(off) tf
100
tr
td(on) 10 0.01 0.1 1.0
10 0.1
VDD 15 V VGS = 10 V RG =10 10
1
10
100
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10 000
trr - Reverse Recovery time - ns VDS - Drain to Source Voltage - V
ID - Drain Current - A
di/dt = 50 A/ s VGS = 0
20
8 6 4 2
1000
10
VDS 0 0 2 6 10 0 14
100 0.01
0.1
1.0
10
ID - Drain Current - A
Qg - Gate Charge - nC
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 30 12 ID = 2 A VGS 10
D = 6 15 V V 24 V
VD
5
PA1520B
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application switching power supply Application circuits using Power MOS FET Safe operating area of Power MOS FET Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037
6
PA1520B
[MEMO]
7
PA1520B
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product.
M4 94.11
8

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