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| BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * * * * * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage E SOT-23 A D B G TOP VIEW S D G H K J L C Dim A B C D E G M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data Case: SOT-23, Molded Plastic Case Material - UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K38 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) H J K L M a Drain Gate All Dimensions in mm Source Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS138 50 50 20 200 300 417 -55 to +150 Units V V V mA mW C/W C Characteristic Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Notes: @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min 50 3/4 3/4 0.5 3/4 100 3/4 3/4 3/4 3/4 3/4 Typ 75 3/4 3/4 1.2 1.4 3/4 3/4 3/4 3/4 3/4 3/4 Max 3/4 0.5 100 1.5 3.5 3/4 50 25 8.0 20 20 Unit V A nA V W mS pF pF pF ns ns VDD = 30V, ID = 0.2A, RGEN = 50W VDS = 10V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 250mA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 10V, ID = 0.22A VDS =25V, ID = 0.2A, f = 1.0KHz 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to miminize self-heating effect. DS30144 Rev. 6 - 2 1 of 5 www.diodes.com BSS138 Ordering Information Device BSS138-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K38 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 0.6 Tj = 25C K38 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2000 L March 3 2001 M Apr 4 YM 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D VGS = 3.5V ID, DRAIN-SOURCE CURRENT (A) 0.5 VGS = 3.25V 0.4 VGS = 3.0V 0.3 VGS = 2.75V 0.2 VGS = 2.5V 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Drain-Source Current vs. Drain-Source Voltage 0.8 ID, DRAIN-SOURCE CURRENT (A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics VDS = 1V -55C 25C 150C DS30144 Rev. 6 - 2 2 of 5 www.diodes.com BSS138 RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W) 2.45 2.25 2.05 1.85 1.65 1.45 1.25 1.05 0.85 0.65 -55 -5 45 95 145 VGS = 4.5V ID = 0.075A VGS = 10V ID = 0.5A Tj, JUNCTION TEMPERATURE (C) Fig. 3 Drain-Source On Resistance vs. Junction Temperature 2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -55 -40 -25 -10 5 20 35 50 65 80 95 110 125 140 ID = 1.0mA Tj, JUNCTION TEMPERATURE (C) Fig. 4 Gate Threshold Voltage vs. Junction Temperature RDS(ON), DRAIN-SOURCE ON RESISTANCE (W) 8 7 6 5 4 3 -55C 25C VGS = 2.5V 150C 2 1 0 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 ID, DRAIN CURRENT (A) Fig. 5 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 6 - 2 3 of 5 www.diodes.com BSS138 9 8 7 6 5 4 3 2 1 0 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (A) Fig. 6 Drain-Source On Resistance vs. Drain Current -55C 25C VGS = 2.75V 150C 6 VGS = 4.5V 5 150C 4 3 2 25C 1 -55C 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Drain-Source On Resistance vs. Drain Current 3.5 VGS = 10V 3 150C 2.5 2 1.5 1 25C -55C 0.5 0 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (A) Fig. 8 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 6 - 2 4 of 5 www.diodes.com BSS138 1 ID, DIODE CURRENT (A) 0.1 150C -55C 0.01 25C 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 VGS = 0V f = 1MHz C, CAPACITANCE (pF) CiSS 10 COSS CrSS 1 0 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30144 Rev. 6 - 2 5 of 5 www.diodes.com BSS138 |
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