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MC74HC00A Quad 2-Input NAND Gate
High-Performance Silicon-Gate CMOS
The MC74HC00A is identical in pinout to the LS00. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. * Output Drive Capability: 10 LSTTL Loads * Outputs Directly Interface to CMOS, NMOS and TTL * Operating Voltage Range: 2 to 6V * Low Input Current: 1A * High Noise Immunity Characteristic of CMOS Devices * In Compliance With the JEDEC Standard No. 7A Requirements * Chip Complexity: 32 FETs or 8 Equivalent Gates
LOGIC DIAGRAM
A1 B1 A2 B2 A3 B3 A4 B4 1 3 2 4 6 5 9 8 10 12 11 13 PIN 14 = VCC PIN 7 = GND Y4 Y3 Y2 Y = AB Y1 TSSOP-14 DT SUFFIX CASE 948G
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14 PDIP-14 N SUFFIX CASE 646 MC74HC00AN AWLYYWW 1 14 SOIC-14 D SUFFIX CASE 751A 1 14 HC 00A ALYW HC00A AWLYWW
1 A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week
FUNCTION TABLE
Inputs A L L H H B L H L H Output Y H H H L
Pinout: 14-Lead Packages (Top View)
VCC 14 B4 13 A4 12 Y4 11 B3 10 A3 9 Y3 8
1 A1
2 B1
3 Y1
4 A2
5 B2
6 Y2
7 GND
ORDERING INFORMATION
Device MC74HC00AN MC74HC00AD MC74HC00ADR2 MC74HC00ADT MC74HC00ADTR2 Package PDIP-14 SOIC-14 SOIC-14 TSSOP-14 TSSOP-14 Shipping 2000 / Box 55 / Rail 2500 / Reel 96 / Rail 2500 / Reel
(c) Semiconductor Components Industries, LLC, 2000
1
March, 2000 - Rev. 8
Publication Order Number: MC74HC00A/D
MC74HC00A
IIIIIIIIIIIIIIIIIIII II I IIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II I I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII II I II I I III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I III II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII
MAXIMUM RATINGS*
SymbolIIIIIIIIIIIIII Parameter VCC Vin DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) Value Unit - 0.5 to + 7.0III V V V - 0.5 to VCC + 0.5 - 0.5 to VCC + 0.5 20 25 50 750 500 450 Vout Iin DC Output Voltage (Referenced to GND) DC Input Current, per Pin mA mA mA Iout DC Output Current, per Pin ICC PD DC Supply Current, VCC and GND Pins Power Dissipation in Still Air, Plastic DIP SOIC Package TSSOP Package mW Tstg TL Storage Temperature - 65 to + 150 260
This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range GND (Vin or Vout) VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.
v
v
_C _C
Lead Temperature, 1 mm from Case for 10 Seconds Plastic DIP, SOIC or TSSOP Package
*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. Derating -- Plastic DIP: - 10 mW/_C from 65_ to 125_C SOIC Package: - 7 mW/_C from 65_ to 125_C TSSOP Package: - 6.1 mW/_C from 65_ to 125_C For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
IIII I I I I IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII II I IIII I II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II I
Symbol VCC Parameter Min 2.0 0 Max 6.0 Unit V V DC Supply Voltage (Referenced to GND) Vin, Vout TA DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time (Figure 1) VCC - 55 0 0 0 + 125 1000 500 400
_C
ns
tr, tf
VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V
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MC74HC00A
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC V 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| 2.4mA |Iout| 4.0mA |Iout| 5.2mA 3.0 4.5 6.0 2.0 4.5 6.0 |Iout| 2.4mA |Iout| 4.0mA |Iout| 5.2mA 3.0 4.5 6.0 6.0 6.0 Guaranteed Limit -55 to 25C 1.50 2.10 3.15 4.20 0.50 0.90 1.35 1.80 1.9 4.4 5.9 2.48 3.98 5.48 0.1 0.1 0.1 0.26 0.26 0.26 0.1 1.0 85C 1.50 2.10 3.15 4.20 0.50 0.90 1.35 1.80 1.9 4.4 5.9 2.34 3.84 5.34 0.1 0.1 0.1 0.33 0.33 0.33 1.0 10 125C 1.50 2.10 3.15 4.20 0.50 0.90 1.35 1.80 1.9 4.4 5.9 2.20 3.70 5.20 0.1 0.1 0.1 0.40 0.40 0.40 1.0 40 A A V Unit V
Symbol VIH
Parameter Minimum High-Level Input Voltage
Condition Vout = 0.1V or VCC -0.1V |Iout| 20A
VIL
Maximum Low-Level Input Voltage
Vout = 0.1V or VCC - 0.1V |Iout| 20A
V
VOH
Minimum High-Level Output Voltage
Vin = VIH or VIL |Iout| 20A Vin =VIH or VIL
V
VOL
Maximum Low-Level Output Voltage
Vin = VIH or VIL |Iout| 20A Vin = VIH or VIL
Iin ICC
Maximum Input Leakage Current Maximum Quiescent Supply Current (per Package)
Vin = VCC or GND Vin = VCC or GND Iout = 0A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol tPLH, tPHL Parameter Maximum Propagation Delay, Input A or B to Output Y (Figures 1 and 2) VCC V 2.0 3.0 4.5 6.0 2.0 3.0 4.5 6.0 Guaranteed Limit -55 to 25C 75 30 15 13 75 27 15 13 10 85C 95 40 19 16 95 32 19 16 10 125C 110 55 22 19 110 36 22 19 10 Unit ns
tTLH, tTHL
Maximum Output Transition Time, Any Output (Figures 1 and 2)
ns
Cin
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D). Typical @ 25C, VCC = 5.0 V, VEE = 0 V CPD Power Dissipation Capacitance (Per Buffer)* 22 pF * Used to determine the no-load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the ON Semiconductor High-Speed CMOS Data Book (DL129/D).
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MC74HC00A
tf 90% 50% 10% tPLH 90% OUTPUT Y 50% 10% tTLH tTHL tPHL tr VCC
INPUT A OR B
GND
Figure 1. Switching Waveforms
TEST POINT OUTPUT DEVICE UNDER TEST CL*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
A B Y
Figure 3. Expanded Logic Diagram (1/4 of the Device)
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MC74HC00A
PACKAGE DIMENSIONS
PDIP-14 N SUFFIX CASE 646-06 ISSUE L
14 8
B
1 7
NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
A F C N H G D
SEATING PLANE
L
J K M
SOIC-14 D SUFFIX CASE 751A-03 ISSUE F
-A-
14 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
-B-
1 7
P 7 PL 0.25 (0.010)
M
B
M
G C
R X 45 _
F
-T-
SEATING PLANE
D 14 PL 0.25 (0.010)
K
M
M
S
J
TB
A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
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MC74HC00A
PACKAGE DIMENSIONS
TSSOP-14 DT SUFFIX CASE 948G-01 ISSUE O
14X K REF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 4.90 5.10 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.50 0.60 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.193 0.200 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.020 0.024 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_
0.10 (0.004) 0.15 (0.006) T U
S
M
TU
S
V
S
N
2X
L/2
14
8
0.25 (0.010) M
L
PIN 1 IDENT. 1 7
B -U-
N F DETAIL E K K1 J J1
0.15 (0.006) T U
S
SECTION N-N -W-
C 0.10 (0.004) -T- SEATING
PLANE
D
G
H
DETAIL E
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EE CC EE CC
A -V-
MC74HC00A
Notes
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MC74HC00A
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