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 HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TYPE 6 PIN OPTOCOUPLER
FEATURES
* HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN * HIGH COLLECTOR TO EMITTER VOLTAGE VCEO: 300 V MIN * ULTRA HIGH CURRENT TRANSFER RATIO CTR: 1000% MIN * HIGH SPEED SWITCHING tr,tf = 100 s TYP
PS2633 PS2633L PS2634 PS2634L
DESCRIPTION
PS2633, PS2633L, PS2634, and PS2634L are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon Darlington-connected phototransistor. PS2633 and PS2634 are in a plastic DIP (Dual In-Line Package). PS2633L and PS2634L are lead bending type (Gull-wing) for surface mount. PS2633 and PS2633L have a base pin and PS2634 and PS2634L have no base pin.
APPLICATIONS
* TELEPHONE/TELEGRAPH LINE RECEIVER * POWER SUPPLY
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER SYMBOLS Diode VF IR C ICEO Transistor BVCEO BVEBO CTR VCE(sat) Coupled R1-2 C1-2 tr tf PARAMETERS Forward Voltage, IF = 10 mA Reverse Current, VR = 5 V Junction Capacitance, V = 0, f = 1.0 MHz Collector to Emitter Dark Current VCE = 300 V, IF = 0 Collector to Emitter Breakdown Voltage IC = 1 mA, IB = 0 Emitter to Base Breakdown Voltage1 IE = 100 A, IC = 0 Current Transfer Ratio, IF =1 mA, VCE = 2 V Collector Saturation Voltage, IF =1 mA, IC = 2 mA Isolation Resistance, Vin-out = 1.0 k VDC Isolation Capacitance, V = 0, f = 1.0 MHz Rise Time2, VCC = 5 V, IC = 10 mA Fall Time2, VCC = 5 V, IC = 10 mA UNITS V A pF nA V V % V pF s s 2. Test Circuit for Switching Time 10
11
PS2633, PS2633L, PS2634, PS2634L MIN TYP 1.15 30 400 300 6 1000 4000 15000 1.0 0.6 100 100 MAX 1.4 5
1. Only PS2633, PS2633L
6
5
4
6
5
4
PULSE INPUT 100 ( PW =Cycles 1/10 ) Duty = IF 2 50 4 1 5
VCC
PULSE INPUT 100 ( PW =Cycles 1/10 ) Duty = IF 1 5
VCC
Vout
1
2
PS2633
3
1
2
PS2634
3
RL = 100 6
2 50
4
Vout
RL = 100
PS2633
PS2634
California Eastern Laboratories
PS2633, PS2633L, PS2634, PS2634L ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS Diode VR IF PD IF (Peak) Transistor VCEO VEBO IC PC Coupled BV TSTG TOP PARAMETERS Reverse Voltage Forward Current (DC) Power Dissipation Peak Forward Current PW = 100 s, Duty Cycle 1% Collector to Emitter Voltage Emitter to Base Voltage2 Collector Current Power Dissipation Isolation Voltage3 Storage Temperature Operating Temperature UNITS V mA mW A RATINGS 6 80 150 1
V V mA mW Vr.m.s. C C
300 6 150 300 5000 -55 to +150 -55 to +100
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Only PS2633, PS2633L 3. AC voltage for 1 minute at TA = 25 C, RH = 60 % between input (Pin No. 1, 2, 3 Common) and output (Pin No. 4, 5, 6 Common).
OUTLINE DIMENSIONS (Units in mm)
PS2633, PS2634
10.16 MAX 6 4
6
PS2633L, PS2634L
10.16 MAX 4
1
1
3.8 MAX
1
3 7.62 6.5
3.8 MAX
1
3 7.62
2.8 MIN 4.55 MAX
0.65
1.34
2.54 0.50 0.10
2.54 MAX 0 to 15 0.25 M
2.54 1.34 0.10
2.54 MAX 0.25 M
0.05 to 0.2
6.5
0.9 0.25 9.60 0.4
PIN CONNECTIONS (Top View)
PS2633, PS2633L PS2634, PS2634L
6
5
4
1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector Base
6
5
4
1. 2. 3. 4. 5. 6. Anode Cathode NC Emitter Collector NC
1
2
3
1
2
3
PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 C)
DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE
400
150
Transistor Power Dissipation, PC (mW)
25 50 75 100
Diode Power Dissipation, PD (mW)
300
100
200
50
100
0
0
25
50
75
100
Ambient Temperature, TA (C) FORWARD CURRENT vs. FORWARD VOLTAGE
100 TA = 100 C 75 C 50 C 10 25 C 0 C -25 C -55 C
160 140
Ambient Temperature, TA (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
5.0 mA
Collector Current, IC (mA)
Forward Current, IF (mA)
4.5 mA 4.0 mA 4.0 mA 3.5 mA
mA 3.0 mA 2.5 A 2.0 m
120 100 80 60
1
1.5 m
A
1.0 mA 40 20
0.1
IF = 0.5 mA 1 2 3 4 5 6 7 8
0.01 0.6
0.8
1.0
1.2
1.4
1.6
0
Forward Voltage, VF (V) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE Collector to Emitter Dark Current, ICEO (nA)
10 VCE = 300 V 1
100 300
Collector to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE
5.0 mA 2.0 mA 2.0 mA
Collector Current, IC (mA)
50
100 n
10 5
IF = 0.5 mA
10 n
1 0.5
1n
100 p -50
0.1
-25
0
25
50
75
100
0
0.2
0.4
0.6
0.8
1.0
1.2
Ambient Temperature, TA (C)
Collector Saturation Voltage, VCE(sat) (V)
PS2633, PS2633L, PS2634, PS2634L TYPICAL PERFORMANCE CURVES (TA = 25 C)
NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE
1.2
CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT
5000 VCE = 2 V
CTR, Normalized Output Current
Current Transfer Ratio, CTR (%)
1.0
Sample A 4000 Sample B
0.8
3000
0.6
2000
0.4 Normalized to 1.0 at TA = 25 C IF = 1 mA, VCE = 2 V
1000
0.2
0
-50
-25
0
25
50
75
100
0 0.1
0.5
1
5
10
20
Ambient Temperature, TA (C) SWITCHING TIME vs. LOAD RESISTANCE
300 VCC = 10 V, IC = 10 mA Pulse Width = 5 ms Duty Cycle = 1/2 tr
Forward Current, IF (mA)
FREQUENCY RESPONSE
100
0
10 100
Switching Time, t (s)
50 td
Voltage Gain, AV (dB)
-5 -10
tf 10
1 k -15 -20 -25 -30 0.01 VCE = 4 V, IC = 10 mA VIN = 0.1 VP-P 1 k 1 F VIN 47 RL VOUT 0.1 1 10 100
5
ts 1 20 50 100 500 1k 2k
Load Resistance, RL ()
Frequency, f (kHz)
CTR DEGRADATION
1.2 IF = 1 mA 1.0
CTR, Normalized
TA = 25 C 0.8 TA = 60 C 0.6
0.4
0.2
0 10
102
103
104
105
106
Time (HR)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -3/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE


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