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| Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington 0.70.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.00.2 5.50.2 2.70.2 4.20.2 4.20.2 Unit: mm 7.50.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings -60 -80 -60 -80 -7 -12 -8 45 2 150 -55 to +150 Unit V 16.70.3 3.10.1 1.40.1 1.30.2 14.00.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB951 2SB951A 2SB951 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 emitter voltage 2SB951A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W B 1 2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) 3 Internal Connection C C C E s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB951 2SB951A 2SB951 2SB951A (TC=25C) Symbol ICBO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -60V, IE = 0 VCB = -80V, IE = 0 VEB = -7V, IC = 0 IC = -30mA, IB = 0 VCE = -3V, IC = -4A VCE = -3V, IC = -8A IC = -4A, IB = -8mA IC = -4A, IB = -8mA VCE = -10V, IC = -1A, f = 1MHz IC = -4A, IB1 = -8mA, IB2 = 8mA, VCC = -50V 20 0.5 2 1 -60 -80 2000 500 -1.5 -2 V V MHz s s s 10000 min typ max -100 -100 -2 Unit A mA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE1 Rank classification Q P Rank hFE1 2000 to 5000 4000 to 10000 1 Power Transistors PC -- Ta 50 2SB951, 2SB951A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -8 TC=25C -7 IB=-2.0mA -1.8mA -1.6mA -1.4mA -1.2mA -1.0mA - 0.8mA - 0.6mA -3 - 0.4mA -2 -1 0 - 0.2mA -100 VCE(sat) -- IC IC/IB=500 Collector power dissipation PC (W) Collector current IC (A) 40 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) -30 -6 -5 -4 -10 30 (1) 20 -3 25C TC=100C -1 -25C 10 (3) (4) 0 0 20 40 60 (2) - 0.3 80 100 120 140 160 0 -1 -2 -3 -4 -5 - 0.1 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C -100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) IC/IB=500 -100 VBE(sat) -- IC (1) IC/IB=250 (2) IC/IB=500 (3) IC/IB=1000 TC=25C -30 -30 -30 -10 (3) -10 TC=-25C 25C 100C -10 (1) (2) (3) -3 (2) -1 (1) -3 -3 -1 -1 - 0.3 - 0.3 - 0.3 - 0.1 - 0.1 - 0.3 -1 -3 -10 - 0.1 - 0.1 - 0.3 -1 -3 -10 - 0.1 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) hFE -- IC 105 Cob -- VCB Collector output capacitance Cob (pF) VCE=-3V 10000 3000 1000 300 100 30 10 3 1 - 0.1 - 0.3 IE=0 f=1MHz TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C ICP -10 IC -3 DC -1 t=1ms 10ms Forward current transfer ratio hFE TC=100C 104 25C -25C 103 Collector current IC (A) - 0.3 - 0.1 - 0.03 - 0.01 -1 102 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 -30 -100 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 2SB951A 2SB951 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB951, 2SB951A Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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