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| Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm s Features q q 2.60.1 4.50.1 1.60.2 1.50.1 0.4max. 45 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC* Tj Tstg Symbol (Ta=25C) Ratings -100 -120 -100 -120 -5 -1 -0.5 1 150 -55 ~ +150 Unit V 3 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 2 1 4.0-0.20 0.40.04 emitter voltage 2SB789A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V marking V A A W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package Marking symbol : D(2SB789) E(2SB789A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion s Electrical Characteristics Parameter Collector to emitter voltage 2SB789 2SB789A (Ta=25C) Symbol VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA VCE = -5V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz min -100 -120 -5 90 50 - 0.2 - 0.85 120 30 - 0.6 -1.2 V V MHz pF 220 typ max Unit V V Collector to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Rank hFE1 Q 90 ~ 155 2SB789 2SB789A DQ EQ R 130 ~ 220 DR ER Marking Symbol 2.50.1 +0.25 High collector to emitter voltage VCEO. Large collector power dissipation PC. 1 Transistor PC -- Ta 1.4 2SB789, 2SB789A IC -- VCE -1.2 Ta=25C -1.0 -18mA -16mA -14mA IB=-20mA -12mA -10mA - 0.8mA - 0.6mA - 0.4mA -1.0 -1.2 VCE=-10V Ta=25C IC -- I B Collector power dissipation PC (W) 1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Collector current IC (A) 1.0 - 0.8 0.8 - 0.6 0.6 - 0.4 - 0.2mA 0.4 0.2 - 0.2 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 Collector current IC (A) - 0.8 - 0.6 - 0.4 - 0.2 0 0 -3 -6 -9 -12 -15 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 -100 -30 -10 -3 25C -1 Ta=-25C 75C IC/IB=10 600 hFE -- IC VCE=-10V Forward current transfer ratio hFE 500 400 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 Ta=75C 25C -25C 300 Ta=75C 200 25C -25C 100 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT -- IE 200 180 Cob -- VCB Collector output capacitance Cob (pF) VCB=-10V Ta=25C 50 45 40 35 30 25 20 15 10 5 0 -1 IE=0 f=1MHz Ta=25C Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 3 10 30 100 -3 -10 -30 -100 Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
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