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2SA2097
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2097
High-Speed Swtching Applications DC-DC Converter Applications
* * * High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB Pc Tj Tstg Rating -50 -50 -7 -5 -10 -0.5 1 20 150 -55 to 150 Unit V V V A A
JEDEC
W C C
SC-64 2-7J1A
JEITA TOSHIBA
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter brakedown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.6 A IC = -1.6 A, IB = -53 mA IC = -1.6 A, IB = -53 mA See Figure 1 circuit diagram VCC ~ -24 V, RL = 15 W IB1 = -IB2 = -53 mA Min 3/4 3/4 -50 200 100 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 3/4 63 280 55 Max -100 -100 3/4 500 3/4 -0.27 -1.10 3/4 3/4 3/4 ns V V Unit nA nA V
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2SA2097
VCC RL Output IB2 IB1 20 ms Duty cycle < 1% Input IB1
IB2
Figure 1 Marking
Switching Time Test Circuit & Timing Chart
A2097
Product No. Lot No.
Explanation of Lot No.
Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture
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2SA2097
IC - VCE
-6 -60 mA -50 mA Common emitter Tc = 25C -30 mA -20 mA 3000 1000 500 300 100 50 30 10 5 3 Common emitter VCE = -2 V
hFE - IC
(A)
-70 mA -4
-40 mA
Tc = 100C
IC
hFE
DC current gain
25C -55C
Collector current
-10 mA -2 -5 mA -2 mA 0 0 IB = -1 mA 0 -2 -4 -6 -8
1 -0.001 -0.003 -0.01 -0.03
-0.1
-0.3
-1
-3
-10
Collector-emitter voltage
VCE
(V)
Collector current
IC
(A)
VCE (sat) - IC
-3 Common emitter IC/IB = 30 -30 -10 -5 -3 -1 -0.5 -0.3 25C -0.1 -0.05 -0.03 Tc = -55C Common emitter IC/IB = 30
VBE (sat) - IC
Collector-emitter saturation voltage VCE (sat) (V)
-0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.005 -0.003 -0.001 -0.001 -0.003 -0.01 -0.03 Tc = 100C -55C 25C
Base-emitter saturation voltage VBE (sat) (V)
-1
100C
-0.1
-0.3
-1
-3
-10
-0.01 -0.001 -0.003 -0.01 -0.03
-0.1
-0.3
-1
-3
-10
Collector current
IC
(A)
Collector current
IC
(A)
IC - VBE
-2 Common emitter VCE = -2 V -10 Common emitter -5 Tc = 25C -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.001 -0.003 -2 A
VCE - IB
Collector-emitter saturation voltage VCE (V)
IC
(A)
Collector current
IC = -2.5 A
-1 Tc = 100C -55C
-1 A
25C 0 0
-0.5
-1
-1.5
-0.01
-0.03
-0.1
-0.3
-1
-3
Base-emitter voltage VBE
(V)
Base current
IB
(A)
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2SA2097
rth (j-c) - tw
Transient thermal resistance (junction- case) rth (j-c) (C/W)
50 30
10 5 3 Tc = 25C Infinite heat sink 1 0.5 0.001 Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.003 0.01 0.03 0.1 0.3 1 3 10
Pulse width
tw
(s)
Safe Operation Area
-100 -50 -30 IC max (pulsed) * 100 ms* 10 ms*
-10
(A)
-5 -3
IC max (continuous)
1 ms*
Collector current IC
-1 -0.5 -0.3
Direct movement (Tc = 25C) 10 ms* 100 ms*
-0.1 -0.05 -0.03 *: Single pulse Tc = 25C Curves must be derated linealy with increase in temperature -1
-0.01 -0.1
-10
VCEO max -100
Collector-emitter voltage
VCEO
(V)
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2SA2097
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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2002-08-21

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