| PART |
Description |
Maker |
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| WV3EG128M72EFSR335D3SG |
1GB - 128Mx72 DDR SDRAM REGISTERED w/PLL, FBGA 1GB 128Mx72 DDR SDRAM的注册瓦锁相环，FBGA封装
|
Electronic Theatre Controls, Inc.
|
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| HYMD5126468 HYMD512646L8 |
128Mx64|2.5V|K/H/L|x16|DDR SDRAM - Unbuffered DIMM 1GB 128Mx64 | 2.5V的| /升| x16 | DDR SDRAM无缓冲DIMM 1GB
|
Lattice Semiconductor, Corp.
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD512M646BLFS8-J HYMD512M646BLFS8-K |
DDR SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| EDD10163BBH-5BLS-F EDD10163BBH-6ELS-F EDD10163BBH- |
64M X 16 DDR DRAM, 5 ns, PBGA60
1G bits DDR Mobile RAM WTR (Wide Temperature Range), Low Power Function
1G bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
ELPIDA MEMORY INC
|
| HB54R1G9F2U-10B HB54R1G9F2U-B75B |
1GB Registered DDR SDRAM DIMM
|
Elpida Memory
|
| HYMD512646BL8J-J HYMD512646BL8J-43 |
DDR SDRAM - Unbuffered DIMM 1GB
|
Hynix Semiconductor
|
| EBD10RD4ABFB-7B |
1GB Registered DDR SDRAM DIMM
|
Elpida Memory
|
