| PART |
Description |
Maker |
| HFC5A HFC4A |
COMMERCIAL/INDUSTRIAL
|
Tyco Electronics
|
| K6R1016C1D-JECII10/12 K6R1016V1D-JTICI08/10 K6R101 |
64K*16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) Data Sheet
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 在商业和工业温度范围运作64Kx16位高速CMOS静态RAM3.3V的）
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BL24C128 BL24C256 |
The device is optimized for use in many industrial and commercial applications
|
SHANGHAI BELLING CO., LTD.
|
| K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D |
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| NT5TU32M16EG-BE NT5TU32M16EE-ACNA NT5TU32M16EE-ACT |
Commercial, Industrial and Automotive DDR2 512Mb SDRAM
|
Nanya Technology Corpor...
|
| CA13901 LM339N CA0139AM CA0139E CA0139M CA0239E CA |
Quad Voltage Comparators for Industrial, Commercial and Military Applications
|
INTERSIL[Intersil Corporation]
|
| CA3028B CA3028BE CA3028BM CA3028AE CA3028AM CA3028 |
DIFFERENTIAL/CASCODE AMPLIFIERS FOR COMMERCIAL AND INDUSTRIAL EQUIPMENT FROM DC TO 120MHZ
|
HARRIS[Harris Corporation]
|
| CA239A CA139A CA139 CA239 CA339 LM339 |
Quad Voltage Comparators for Industrial, Commercial and Military Applications
|
Intersil Corporation
|
| CA358 LM2904 LM358 |
Dual, 1MHz, Operational Amplifiers for Commercial Industrial, and Military Applications
|
Intersil Corporation
|
| K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6R1008V1B-B-L K6R1008V1B-C10 K6R1008V1B-C8 K6R100 |
128K X 8 STANDARD SRAM, 10 ns, PDSO32
128Kx8 Bit High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges 128Kx8位高速静态RAM.3V的工作），革命销出。在商用和工业温度范围运
|
Samsung Electronic
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
