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IRF6691TR1PBF - A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.

IRF6691TR1PBF_9100811.PDF Datasheet


Part No.	IRF6691TR1PBF
Description	A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.
File Size	805.82K / 10 Page
Maker	International Rectifier
Homepage	http://www.irf.com/
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Full text search : A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes.

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