PART |
Description |
Maker |
NTE110MP |
Germanium Diode Point Contact Diode(Matched Pair)
|
NTE Electronics, Inc. NTE[NTE Electronics]
|
ES9S06K4FA |
Improved contact reliability with a 2-point contact structure.
|
Japan Aviation Electron...
|
1N830 |
Silicon Point Contact Detector Diodes
|
Skyworks
|
1N416C |
(1N41xx) X Band Point Contact Mixer Diodes
|
ETC
|
M28C64-A25NS1T M28C64-A20MS1T M28C64-A20MS3T M28C6 |
64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection 64千位8K的8并行EEPROM,带有软件数据保 SWITCH, DPDT; Thread size:1/4 x 40UNS; Switch function type:DPDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, op. RoHS Compliant: Yes SWITCH, DPDT, LOCKING; Thread size:1/4 x 40UNS; Switch function type:DPDT On-On; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, RoHS Compliant: Yes SWITCH, DPDT, BIASED; Thread size:1/4 x 40UNS; Switch function type:DPDT On-Mom; Current, contact @ contact voltage AC max:3A; Current, contact @ contact voltage DC max:8A; Material, contact:Silver; Resistance, contact:10mR; Temp, RoHS Compliant: Yes Toggle Switch; Circuitry:SPDT; Switch Operation:On-Off-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Solder Lug; Leaded Process Compatible:Yes; Mounting Type:Solder Lug RoHS Compliant: Yes 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection
|
STMicroelectronics N.V. 意法半导
|
GL607 OA180 OA1182 OA1161 OA1154 |
10 V, 300 mA, gold bonded germanium diode 20 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 140 V, 500 mA, gold bonded germanium diode 55 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
|
1N113 1N100 1N68 1N107 1N128 1N270JTXV 1N143 1502B |
100 V, 60 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 10 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES 12 V, 500 mA, gold bonded germanium diode 50 V, 500 mA, gold bonded germanium diode 75 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode 125 V, 500 mA, gold bonded germanium diode 85 V, 500 mA, gold bonded germanium diode 30 V, 500 mA, gold bonded germanium diode 40 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC BKC International Electronics List of Unclassifed Man...
|
5962-02A0201VXC 5962-02A0201QXC |
Single Point to Point IEEE 1355 High Speed Controller
|
ATMEL Corporation
|
AT7912F-14 |
Derived from the T7906 Single Point to Point IEEE 1355 High Speed Controller
|
ATMEL Corporation
|
RIF-0-RSC-12DC |
Pre-assembled relay module with screw connection, consisting of: relay base with ejector and multi-layer gold contact relay. Contact type: 1 N/O contact. Input voltage: 12 V DC
|
PHOENIX CONTACT
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