| PART |
Description |
Maker |
| APT10SCD65KCT |
SiC Schottky Diodes
|
Microsemi
|
| SCS106AG |
SiC Schottky Barrier Diodes
|
Rohm
|
| LSIC2SD120A05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDW40G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AE |
SiC Schottky Barrier Diode
|
Rohm
|
